<div class="csl-bib-body">
<div class="csl-entry">Saleh, A. S., Zahedmanesh, H., Ceric, H., De Wolf, I., & Croes, K. (2023). Impact of via geometry and line extension on via-electromigration in nano-interconnects. In <i>2023 IEEE International Reliability Physics Symposium (IRPS) Proceedings</i>. 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, United States of America (the). https://doi.org/10.1109/IRPS48203.2023.10118027</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/190049
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dc.description.abstract
Via topology and line extension length can impact current crowding, stress distribution and void dynamics in the cathode region of nano-interconnects and therefore have an impact on electromigration lifetimes. In this study, a 2D physics-based model is employed to capture the effect of line extension and via taper angle on stress evolution and void dynamics, quantitatively. Varying via taper angle is shown to have higher impact on peak stress reduction (~0.8 MPa/nm of extra space) compared to line extension (~0.08 MPa/nm of extra space).
en
dc.language.iso
en
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dc.subject
electromigration
en
dc.subject
void dynamics
en
dc.subject
nanointerconnect
en
dc.subject
line extension
en
dc.subject
via taper angle
en
dc.title
Impact of via geometry and line extension on via-electromigration in nano-interconnects
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.relation.isbn
978-1-6654-5672-2
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dc.relation.doi
10.1109/IRPS48203.2023
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2023 IEEE International Reliability Physics Symposium (IRPS) Proceedings
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tuw.researchTopic.id
M3
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Metallic Materials
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
20
-
tuw.researchTopic.value
30
-
tuw.researchTopic.value
50
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tuw.publication.orgunit
E360 - Institut für Mikroelektronik
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tuw.publisher.doi
10.1109/IRPS48203.2023.10118027
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dc.description.numberOfPages
4
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tuw.event.name
2023 IEEE International Reliability Physics Symposium (IRPS)
