<div class="csl-bib-body">
<div class="csl-entry">Souza Berti Rodrigues, F., Aguinsky, L. F., Lenz, C., Hössinger, A., & Weinbub, J. (2023). 3D modeling of feature-scale fluorocarbon plasma etching in silica. <i>Journal of Computational Electronics</i>, <i>22</i>(5), 1558–1563. https://doi.org/10.1007/s10825-023-02068-y</div>
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dc.identifier.issn
1569-8025
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/190886
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dc.description.abstract
Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic random access memory devices. However, the development of etching technology is challenged by the lack of understanding of complex surface reaction mechanisms and by the intricacy of etchant flux distribution on the feature-scale. To study these effects, we present a three-dimensional, TCAD-compatible, feature-scale modeling methodology. The methodology combines a level-set topography engine, Langmuir kinetics surface reaction modeling, and a combination of reactant flux evaluation schemes. We calibrate and evaluate our model to a novel, highly selective, etching process of a SiO₂ via and a Ru hardmask by CF₄/C₄F₈. We adapt our surface reaction model to the novel stack of materials, and we are able to accurately reproduce the etch rates, topography, and critical dimensions of the reported experiments. Our methodology is therefore able to prototype and study novel etching processes and can be integrated into process-aware three-dimensional device simulation workflows.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.publisher
SPRINGER
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dc.relation.ispartof
Journal of Computational Electronics
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
Process modeling
en
dc.subject
TCAD
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dc.subject
Feature-scale
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dc.subject
Langmuir kinetics
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dc.subject
Level-set
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dc.title
3D modeling of feature-scale fluorocarbon plasma etching in silica