<div class="csl-bib-body">
<div class="csl-entry">Filipovic, L., Bobinac, J., Piso, J., & Reiter, T. (2023). Physics-Informed Compact Model for SF6/O2 Plasma Etching. In <i>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i> (pp. 73–76). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319479</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/192891
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dc.description.abstract
We propose a process simulation/emulation flow which incorporates the generation and application of compact models for fast geometry generation, suitable for design-technology co-optimization (DTCO). The methodology is applied to develop a compact model for etching in a SF 6 /O 2 plasma using 35 data points from experimental measurements and results from a calibrated physical model. The compact model is tested against physical simulations using 80 random points in the input parameter domain consisting of varying the oxygen content and pressure in the plasma chamber. The model is shown to produce highly accurate geometries with an average error for the depth and width at half depth (WAHD) of 2.0% and 1.0%, respectively. The simulation speedup is more than three orders of magnitude, when compared to the physical model; it should also be noted that the parallelized physical model was executed on 40 cores, while the compact model was run on a single core.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
Process simulation and emulation
en
dc.subject
Design-technology co-optimization (DTCO)
en
dc.subject
Technology computer-aided design (TCAD)
en
dc.subject
SF6/O2 etching
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dc.subject
Compact model
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dc.title
Physics-Informed Compact Model for SF6/O2 Plasma Etching
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.relation.publication
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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dc.relation.isbn
978-4-86348-803-8
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dc.relation.doi
10.23919/SISPAD57422.2023
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dc.description.startpage
73
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dc.description.endpage
76
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dc.relation.grantno
00000
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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tuw.relation.publisher
IEEE
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tuw.project.title
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
40
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tuw.researchTopic.value
60
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publisher.doi
10.23919/SISPAD57422.2023.10319479
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0003-1687-5058
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tuw.author.orcid
0000-0002-5638-9129
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tuw.event.name
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023)