<div class="csl-bib-body">
<div class="csl-entry">Reiter, T., Toifl, A., Hössinger, A., & Filipovic, L. (2023). Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures. In <i>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i> (pp. 85–88). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319506</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/192892
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dc.description.abstract
One of the critical processing steps during the fabrication of modern 3D NAND flash memory structures is the selective etching of Si 3 N 4 in the presence of SiO 2 , which can cause the redeposition of byproducts on the SiO 2 layers. We present a physical process model for this phenomenon during etching and apply it to simulate oxide regrowth. The model describes the mass transfer of byproducts with a convection-diffusion equation which is solved on a cell-set volume representation of the etched solution. The simulated results, which combine Si 3 N 4 etching, byproduct mass transfer, and the subsequent redeposition, show excellent agreement with experimental studies for the desired structures.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
Oxide regrowth
en
dc.subject
Selective etching
en
dc.subject
Process simulation
en
dc.subject
3D NAND
en
dc.title
Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.relation.publication
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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dc.relation.isbn
979-8-3503-1368-0
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dc.relation.doi
10.23919/SISPAD57422.2023
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dc.description.startpage
85
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dc.description.endpage
88
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dc.relation.grantno
P300686
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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tuw.relation.publisher
IEEE
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tuw.project.title
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
50
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tuw.researchTopic.value
50
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publication.orgunit
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials
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tuw.publisher.doi
10.23919/SISPAD57422.2023.10319506
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0002-5638-9129
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tuw.author.orcid
0000-0003-1687-5058
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tuw.event.name
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
en
tuw.event.startdate
27-09-2023
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tuw.event.enddate
29-09-2023
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
Kobe
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tuw.event.country
JP
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tuw.event.presenter
Reiter, Tobias
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.languageiso639-1
en
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item.openairetype
conference paper
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item.grantfulltext
restricted
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item.fulltext
no Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_5794
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.orcid
0000-0002-5638-9129
-
crisitem.author.orcid
0000-0003-1687-5058
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik