<div class="csl-bib-body">
<div class="csl-entry">Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Study of Self-Heating and its Effects in SOT-STT-MRAM. In <i>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i> (pp. 337–340). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319549</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/193527
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dc.description.abstract
We fully couple magnetization, charge, spin, and temperature dynamics to study the switching of the combined spin-orbit torque (SOT) - spin-transfer torque (STT) magne-toresistive random access memory (MRAM). To account for the increased temperature, the material parameters are scaled. In comparison to the constant temperature model, our full model shows an incubation period due to the rising temperature, in agreement with experimental data. Furthermore, we demonstrate field-free switching of the SOT-STT MRAM cell and show that the incubation time can be minimized, when sufficiently high voltages are applied.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
Spintronics
en
dc.subject
SOT-MRAM
en
dc.subject
Self-Heating
en
dc.subject
Temperature Scaling
en
dc.subject
Incubation Time
en
dc.title
Study of Self-Heating and its Effects in SOT-STT-MRAM
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.relation.publication
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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dc.contributor.affiliation
Silvaco (United Kingdom), United Kingdom of Great Britain and Northern Ireland (the)
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dc.relation.isbn
978-4-86348-803-8
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dc.relation.doi
10.23919/SISPAD57422.2023
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dc.description.startpage
337
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dc.description.endpage
340
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dc.relation.grantno
P300686
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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tuw.relation.publisher
IEEE
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tuw.project.title
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
50
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tuw.researchTopic.value
50
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publisher.doi
10.23919/SISPAD57422.2023.10319549
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0002-5583-6177
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tuw.event.name
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023)
en
tuw.event.startdate
27-09-2023
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tuw.event.enddate
29-09-2023
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
Kobe
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tuw.event.country
JP
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tuw.event.presenter
Hadamek, Tomas
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.languageiso639-1
en
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item.openairetype
conference paper
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item.grantfulltext
restricted
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item.fulltext
no Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_5794
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
Silvaco (United Kingdom)
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crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
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crisitem.author.orcid
0000-0002-5583-6177
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crisitem.author.parentorg
E360 - Institut für Mikroelektronik
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crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
