<div class="csl-bib-body">
<div class="csl-entry">Mounir, A., Iniguez, B., Lime, F., Kloes, A., Knobloch, T., & Grasser, T. (2023). Compact I-V Model for back-gated and double-gated TMD FETs. <i>Solid-State Electronics</i>, <i>207</i>, 1–5. https://doi.org/10.1016/j.sse.2023.108702</div>
</div>
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dc.identifier.issn
0038-1101
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/196184
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dc.description.abstract
A physics-based analytical DC compact model for double and single gate TMD FETs is presented. The model is developed by calculating the charge density inside the 2D layer which is expressed in terms of the Lambert W function that recently has become the standard in SPICE simulators. The current is then calculated in terms of the charge densities at the drain and source ends of the channel. We validate our model against measurement data for different device structures. A superlinear current increase above certain gate voltage has been observed in some MoS2 FET devices, where we present a new mobility model to account for the observed phenomena. Despite the simplicity of the model, it shows very good agreement with the experimental data.
en
dc.description.sponsorship
European Commission
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dc.language.iso
en
-
dc.publisher
Elsevier
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dc.relation.ispartof
Solid-State Electronics
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dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/4.0/
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dc.subject
2D FETs
en
dc.subject
MoS2 FETs
en
dc.subject
Unified charge control model
en
dc.subject
DC compact model
en
dc.title
Compact I-V Model for back-gated and double-gated TMD FETs
en
dc.type
Article
en
dc.type
Artikel
de
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
en
dc.rights.license
Creative Commons Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International
de
dc.contributor.affiliation
Universidad Rovira i Virgili, Spain
-
dc.contributor.affiliation
Universidad Rovira i Virgili, Spain
-
dc.contributor.affiliation
Universidad Rovira i Virgili, Spain
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dc.contributor.affiliation
Technische Hochschule Mittelhessen, Germany
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dc.description.startpage
1
-
dc.description.endpage
5
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dc.relation.grantno
101021351
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dc.rights.holder
2023 The Author(s)
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dc.type.category
Original Research Article
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tuw.container.volume
207
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tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
wb.publication.intCoWork
International Co-publication
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tuw.project.title
Fluoride für die nächste Generation von 2D Nanoelektronik
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tuw.researchTopic.id
Q4
-
tuw.researchTopic.id
C6
-
tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
50
-
tuw.researchTopic.value
50
-
dcterms.isPartOf.title
Solid-State Electronics
-
tuw.publication.orgunit
E360 - Institut für Mikroelektronik
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tuw.publisher.doi
10.1016/j.sse.2023.108702
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dc.date.onlinefirst
2023-06-30
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dc.identifier.articleid
108702
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dc.identifier.eissn
1879-2405
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dc.identifier.libraryid
AC17203065
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dc.description.numberOfPages
5
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tuw.author.orcid
0000-0001-5156-9510
-
dc.rights.identifier
CC BY-NC-ND 4.0
en
dc.rights.identifier
CC BY-NC-ND 4.0
de
wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.languageiso639-1
en
-
item.openairetype
research article
-
item.grantfulltext
open
-
item.fulltext
with Fulltext
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item.cerifentitytype
Publications
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item.mimetype
application/pdf
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
-
item.openaccessfulltext
Open Access
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crisitem.author.dept
Universidad Rovira i Virgili
-
crisitem.author.dept
Universidad Rovira i Virgili
-
crisitem.author.dept
Universidad Rovira i Virgili
-
crisitem.author.dept
Technische Hochschule Mittelhessen
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.orcid
0000-0001-5156-9510
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
