<div class="csl-bib-body">
<div class="csl-entry">Wind, L., Preiß, S., Nazzari, D., Bažíková, M., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Sistani, M., & Weber, W. M. (2024, May 15). <i>Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts</i> [Conference Presentation]. 10th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), Athen, Greece. http://hdl.handle.net/20.500.12708/199907</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/199907
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dc.language.iso
en
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dc.subject
GeSn
en
dc.subject
transistors
en
dc.subject
optoelectronics
en
dc.title
Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts
en
dc.type
Presentation
en
dc.type
Vortrag
de
dc.contributor.affiliation
TU Wien, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
-
dc.contributor.affiliation
University of California, Berkeley, United States of America (the)
