<div class="csl-bib-body">
<div class="csl-entry">Behrle, R., Murphey, C. G. E., Cahoon, J. F., Barth, S. C., Den Hertog, M. I., Weber, W. M., & Sistani, M. (2024). Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure Transistors. In <i>GADEST 2024</i>. 20th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), Bad Schandau, Germany. http://hdl.handle.net/20.500.12708/200987</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/200987
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dc.language.iso
en
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dc.subject
transistors
en
dc.subject
Al-Si
en
dc.subject
heterostructures
en
dc.subject
Al-Ge
en
dc.subject
nanowire
en
dc.title
Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure Transistors
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
University of North Carolina at Chapel Hill, United States of America (the)
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dc.contributor.affiliation
University of North Carolina at Chapel Hill, United States of America (the)
