Matrix dependence analysis enabling quantitative application of Low-Energy Ion Spectroscopy for wide bandgap semiconductor materials

Abstract

Semiconductors are a class of materials with electrical properties between conductors and insulators and have revolutionized modern technology. Their unique electronic behavior, rooted in quantum mechanics, enables precise control over the flow of electricity. This control forms the basis of semiconductor devices that power our electronically interconnected world. At the heart of semiconductor physics lies the understanding of band theory which is explained by the state of the electrons on different energy levels [1]. The lower energetic levels are known as the valence band, while the higher energy level constitutes the conduction band. For semiconductors, the Fermi level is found between these two bands. Introducing specific chemical elements as dopants into semiconductors enables to tune the electronic properties, such as augmenting electron density, thereby bringing the Fermi level closer to the conduction band, or increasing hole concentration, thereby nearing the Fermi level to the valence band [2]. Electric conductivity elevates with the introduction of energy in the system by increasing the temperature, enabling electrons to traverse to higher energy levels within these bands.