<div class="csl-bib-body">
<div class="csl-entry">Antonov, V. A., Tikhonenko, F. V., Popov, V. P., Miakonkikh, A. V., Rudenko, K. V., & Sverdlov, V. (2024). SOS pseudo-FeFETs after Furnace or rapid annealings and thinning by thermal Oxidation. <i>Solid-State Electronics</i>, <i>215</i>, 1–6. https://doi.org/10.1016/j.sse.2023.108821</div>
</div>
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dc.identifier.issn
0038-1101
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/205566
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dc.description.abstract
The silicon-on-sapphire (SOS) pseudo-MOSFETs with high-k buried hafnium dioxide interlayer (IL) were investigated after the hydrogen induced Si and HfO₂ layer transfer on c-sapphire wafers and annealing at 600–1100 °C. HRTEM, GIXRD and Raman measurements were used to reveal the hafnia phases for furnace and rapid thermal annealings (FA and RTA).
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.publisher
PERGAMON-ELSEVIER SCIENCE LTD
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dc.relation.ispartof
Solid-State Electronics
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dc.subject
Sapphire
en
dc.subject
Ferroelectric
en
dc.subject
HfO2 interlayer
en
dc.subject
Phases
en
dc.subject
Pseudo-MOSFETs
en
dc.title
SOS pseudo-FeFETs after Furnace or rapid annealings and thinning by thermal Oxidation
en
dc.type
Article
en
dc.type
Artikel
de
dc.contributor.affiliation
Institute of Semiconductor Physics, Russian Federation (the)
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dc.contributor.affiliation
Institute of Semiconductor Physics, Russian Federation (the)
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dc.contributor.affiliation
Institute of Semiconductor Physics, Russian Federation (the)
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dc.contributor.affiliation
Russian Academy of Sciences, Russian Federation (the)
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dc.contributor.affiliation
Russian Academy of Sciences, Russian Federation (the)
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dc.description.startpage
1
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dc.description.endpage
6
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dc.relation.grantno
P300686
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dc.type.category
Original Research Article
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tuw.container.volume
215
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tuw.journal.peerreviewed
true
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tuw.peerreviewed
true
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wb.publication.intCoWork
International Co-publication
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tuw.project.title
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik
