Physical Modelling of Charge Trapping Effects in SiC MOSFETs

Abstract

In the recent past, lots of efforts have been put into further developing SiC power MOSFETs. In addition to optimization of device geometry, i.e., vertical device structure, various post-oxidation anneals have been studied to improve carrier mobility by reducing trap density. Nevertheless, a considerable number of traps remain, which are the central origin for dynamic changes in the threshold voltage of up to several volts during DC and AC operation. To explain the threshold voltage instability, an effective two-state defect model has been recently applied. In this work, we give an overview of modeling efforts to explain the impact of defects on the device threshold voltage and discuss the hysteresis of voltage sweep and bias temperature instabilities in SiC transistors. Based on the combination of measurements and computer simulations, a list of potential defect candidates responsible for the observed threshold voltage instabilities is discussed.