DC Field
Value
Language
dc.contributor.author
Stabentheiner M
-
dc.contributor.author
Novak M
-
dc.contributor.author
Taylor, A.A.
-
dc.contributor.author
Knuuttila L.
-
dc.contributor.author
Jamnig A.
-
dc.contributor.author
Pogany, Dionyz
-
dc.contributor.author
Ostermaier, Clemens
-
dc.date.accessioned
2025-01-09T08:28:23Z
-
dc.date.available
2025-01-09T08:28:23Z
-
dc.date.issued
2024-11-07
-
dc.identifier.citation
<div class="csl-bib-body"> <div class="csl-entry">Stabentheiner M, Novak M, Taylor, A. A., Knuuttila L., Jamnig A., Pogany, D., &#38; Ostermaier, C. (2024, November 7). <i>Investigation of electrically active dislocations in quasi-vertical GaN-on-Si diodes</i> [Conference Presentation]. International Workshop on Nitride Semiconductors (IWN 2024), O’ahu, United States of America (the).</div> </div>
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/208172
-
dc.language.iso
en
-
dc.subject
GaN
en
dc.subject
diodes
en
dc.subject
silicon
en
dc.title
Investigation of electrically active dislocations in quasi-vertical GaN-on-Si diodes
en
dc.type
Presentation
en
dc.type
Vortrag
de
dc.type.category
Conference Presentation
-
tuw.researchTopic.id
M2
-
tuw.researchTopic.id
M1
-
tuw.researchTopic.name
Materials Characterization
-
tuw.researchTopic.name
Surfaces and Interfaces
-
tuw.researchTopic.value
50
-
tuw.researchTopic.value
50
-
tuw.publication.orgunit
E362-02 - Forschungsbereich Nanoelektronische Bauelemente
-
tuw.event.name
International Workshop on Nitride Semiconductors (IWN 2024)
en
tuw.event.startdate
03-11-2024
-
tuw.event.enddate
08-11-2024
-
tuw.event.online
On Site
-
tuw.event.type
Event for scientific audience
-
tuw.event.place
O’ahu
-
tuw.event.country
US
-
tuw.event.presenter
Stabentheiner M
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
-
wb.sciencebranch.oefos
2020
-
wb.sciencebranch.value
100
-
item.languageiso639-1
en
-
item.openairetype
conference paper not in proceedings
-
item.grantfulltext
none
-
item.fulltext
no Fulltext
-
item.cerifentitytype
Publications
-
item.openairecristype
http://purl.org/coar/resource_type/c_18cp
-
crisitem.author.dept
Infineon Technologies (Austria)
-
crisitem.author.dept
E362-02 - Forschungsbereich Nanoelektronische Bauelemente
-
crisitem.author.dept
E362 - Institut für Festkörperelektronik
-
crisitem.author.parentorg
E362 - Institut für Festkörperelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
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