<div class="csl-bib-body">
<div class="csl-entry">Ravichandran, H., Knobloch, T., Subbulakshmi Radhakrishnan, S., Wilhelmer, C., Stepanoff, S., Stampfer, B., Ghosh, S., Oberoi, A., Waldhoer, D., Chen, C., Redwing, J. M., Wolfe, D. E., Grasser, T., & Das, S. (2024). A stochastic encoder using point defects in two-dimensional materials. <i>Nature Communications</i>, <i>15</i>(1), 1–11. https://doi.org/10.1038/s41467-024-54283-1</div>
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dc.identifier.issn
2041-1723
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/208284
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dc.description.abstract
While defects are undesirable for the reliability of electronic devices, particularly in scaled microelectronics, they have proven beneficial in numerous quantum and energy-harvesting applications. However, their potential for new computational paradigms, such as neuromorphic and brain-inspired computing, remains largely untapped. In this study, we harness defects in aggressively scaled field-effect transistors based on two-dimensional semiconductors to accelerate a stochastic inference engine that offers remarkable noise resilience. We use atomistic imaging, density functional theory calculations, device modeling, and low-temperature transport experiments to offer comprehensive insight into point defects in WSe2 FETs and their impact on random telegraph noise. We then use random telegraph noise to construct a stochastic encoder and demonstrate enhanced inference accuracy for noise-inflicted medical-MNIST images compared to a deterministic encoder, utilizing a pre-trained spiking neural network. Our investigation underscores the importance of leveraging intrinsic point defects in 2D materials as opportunities for neuromorphic computing.
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dc.language.iso
en
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dc.publisher
NATURE PORTFOLIO
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dc.relation.ispartof
Nature Communications
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dc.subject
2D Materials
en
dc.subject
scaled microelectronics
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dc.subject
scaled field-effect transistors
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dc.subject
neuromorphic computing
en
dc.title
A stochastic encoder using point defects in two-dimensional materials