<div class="csl-bib-body">
<div class="csl-entry">Kosina, H., & Gull, J. (2024, March 25). <i>Modeling of Electron-electron Scattering in Nanoelectronic Devices</i> [Conference Presentation]. World Congress on Nanoscience and Nanotechnology, Barcelona, Spain.</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/210575
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dc.description.abstract
Electron-electron scattering (EES) affects the shape of the energy distribution function of charge carriers. This effect has to be considered, for instance, in the modeling of hot carrier solar cells, or in the physics-based modeling of hot carrier degradation of semiconductor devices. The widely used Boltzmann transport equation becomes nonlinear if EES is included in the scattering operator. Traditionally, the numerical solution of that nonlinear equation requires additional approximations and comes at high computational cost. In this work we resort to a two-particle formulation. The kinetic equation for the two-particle distribution function is linear and can be solved by Monte Carlo (MC) methods. While deterministic methods suffer from the curse of high dimensionality, the efficiency of the MC method degrades only little when the dimension of the underlying phase space is increased.
For the solution of the stationary transport problem a two-particle MC algorithm has been developed. In stationary simulations of bulk silicon no visible effect of EES on the distribution function and consequently on the electron mobility is observed. In stationary device simulations, however, EES causes an enhanced high energy tail relative to the thermal tail. Currently, methods for statistical enhancement at high energies are under development.
The transient transport problem is addressed by an ensemble MC algorithm. The mean energy of hot carriers is observed to relax faster in the presence of EES, whereas the cold carriers experience a temporary energy increase.
en
dc.description.sponsorship
FFG - Österr. Forschungsförderungs- gesellschaft mbH
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dc.language.iso
en
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dc.subject
Electron-electron scattering
en
dc.subject
Monte Carlo methods
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dc.subject
carrier transport
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dc.subject
kinetic transport equations
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dc.title
Modeling of Electron-electron Scattering in Nanoelectronic Devices
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dc.type
Presentation
en
dc.type
Vortrag
de
dc.relation.grantno
880672
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dc.type.category
Conference Presentation
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tuw.publication.invited
invited
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tuw.project.title
Simulation Nanoelektronischer Bauelemente
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
50
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tuw.researchTopic.value
50
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.event.name
World Congress on Nanoscience and Nanotechnology
en
tuw.event.startdate
25-03-2024
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tuw.event.enddate
26-03-2024
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
Barcelona
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tuw.event.country
ES
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tuw.event.presenter
Kosina, Hans
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tuw.event.track
Single Track
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
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item.languageiso639-1
en
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item.openairetype
conference paper not in proceedings
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item.grantfulltext
none
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item.fulltext
no Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_18cp
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
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crisitem.author.parentorg
E360 - Institut für Mikroelektronik
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crisitem.author.parentorg
E360 - Institut für Mikroelektronik
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crisitem.project.funder
FFG - Österr. Forschungsförderungs- gesellschaft mbH
