Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets

Abstract

In exploring the reliability issues of multi-layered STT-MRAM, particularly with synthetic antiferromagnets, our research delves into the complexities of magnetization dynamics. We leverage the spin drift-diffusion model to investigate the intricacies of the back-hopping effect which leads to undesired switching in the device's layers. This phenomenon is notably magnified as devices become smaller, aiming for higher memory density but at the cost of data integrity. Our focus extends to the nuanced role of interface exchange coupling in multilayered configurations, illustrating its pivotal influence on the magnetic interactions and stability within these advanced spintronic devices. By examining how the non-magnetic layers mediate exchange coupling and impact the magnetic coherence between ferromagnetic layers, we gain crucial insights into the mechanisms driving magnetic stability and domain wall behaviors. This comprehensive approach, encompassing both charge and spin currents, offers a comprehensive view of MRAM dynamics and underscores the importance of fine-tuning exchange coupling for enhanced device performance. This kind of advancements are aimed to significantly elevate the capabilities of memory technologies, paving the way for improved data retention and faster write/read operations. Our findings represent a significant stride in advancing high-capacity and high-efficiency memory solutions.