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<div class="csl-entry">Richter, S., Gutschka, C., Danner, D., Hahn, R., Wojcik, T., Ntemou, E., Jerg, C., Ramm, J., Polcik, P., Kolozsvári, S., Primetzhofer, D., & Riedl-Tragenreif, H. (2025). High-throughput phase exploration of ternary transition metal carbide TM-X-C (X=Al/Si) thin films. <i>Acta Materialia</i>, <i>288</i>, Article 120839. https://doi.org/10.1016/j.actamat.2025.120839</div>
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dc.identifier.issn
1359-6454
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/212784
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dc.description.abstract
Transition metal carbides (TMCs) are highly valued for their exceptional thermal stability (melting temperatures up to 4000 °C), refractory character, and outstanding mechanical properties, particularly hardness. These properties make TMCs crucial for applications in extreme conditions, such as in aerospace and tooling industries. Striving for novel oxidation-resistant ternary carbides, we systematically screened the phase formation of TM-X-C (where X = Al or Si) using a combined theoretical and experimental high-throughput approach. Density functional theory (DFT) calculations forecast the phase formation of (meta)stable TM-X-C solid solutions (with TM = Ti, Zr, Hf, Ta, W) using the formation energy and lattice constant ratios as structural key parameters. These theoretical predictions are experimentally validated by synthesizing over 260 compositions across the 10 different TM-X-C material systems by combinatorial magnetron sputtering. The DFT calculations indicated that Si preferentially occupies both C and TM sites, while Al tends to fill TM sites. Structural analysis experimentally confirmed the formation of face-centered-cubic TM-X-C solid solutions up to alloying contents of 25–30 at.% – for all material families except W-X-C. Additional TEM investigation confirmed the formation of fcc solid solutions. A strong correlation between prevalent phases and mechanical properties is observed, with the highest hardness values (30–40 GPa) found for fcc structured TM-X-C thin films, followed by a significant decrease entering multi-phased or amorphization phase regions – typically occurring above 25 at.% Al or Si. This comprehensive phase screening paves the way for a targeted development of novel TM-X-C ceramic thin film materials.
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dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.publisher
PERGAMON-ELSEVIER SCIENCE LTD
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dc.relation.ispartof
Acta Materialia
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
Ternary Carbides
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dc.subject
PVD
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dc.subject
Solid Solutions
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dc.subject
DFT
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dc.subject
Phase Analysis
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dc.title
High-throughput phase exploration of ternary transition metal carbide TM-X-C (X=Al/Si) thin films