<div class="csl-bib-body">
<div class="csl-entry">Poll, T. (2025). <i>Electrical characterization of p-GaN gate HEMTs : The role of intentional hole injection for dynamic RDS,on recovery</i> [Diploma Thesis, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2025.120536</div>
</div>
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dc.identifier.uri
https://doi.org/10.34726/hss.2025.120536
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/213327
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dc.description
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers
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dc.language
English
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dc.language.iso
en
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dc.rights.uri
http://rightsstatements.org/vocab/InC/1.0/
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dc.subject
HEMT
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dc.subject
GaN
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dc.subject
Hot carrier stress
en
dc.title
Electrical characterization of p-GaN gate HEMTs : The role of intentional hole injection for dynamic RDS,on recovery
en
dc.title.alternative
Elektrische Charakterisierung von p-GaN Gate HEMTs: Rolle absichtlicher Lochinjektion in der dynamischen RDS,on Regeneration