Tailoring quantum materials by ion beams

Abstract

Many of the intriguing properties of modern quantum materials, such as superconductivity, Mott transitions, and topological behavior, are based on strong electronic correlations within the material. Tuning these properties for applications requires a method which can selectively interact with electronic sub-system of the material, at the nanoscale, and minimizes large-scale lattice damage in order to maintain the desired quantum properties at the surface. Slow highly charged ions (HCIs) are a good candidate for the manipulation of quantum materials, as their interaction is dominated by electron exchange and decay processes that are highly confined near to the surface. Here we use HCIs to induce a chiral switch of the charge density wave in the Mott insulator phase of bulk 1T-TaS2. This method provides a new pathway towards lithographic control of surface electronic chirality.