<div class="csl-bib-body">
<div class="csl-entry">Fuchsberger, A., Eysin, K., Wind, L., Prado Navarrete, E., Aberl, J., Brehm, M., Ratschinski, I., Hiller, D., Sistani, M., & Weber, W. M. (2025). Modulation-acceptor-doped SiGe Schottky barrier field-effect transistors. <i>IEEE Electron Device Letters</i>, <i>46</i>(8), 1429–1432. https://doi.org/10.1109/LED.2025.3577243</div>
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dc.identifier.issn
0741-3106
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/218461
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dc.description.abstract
Modulation acceptor doping allows for the generation of holes as free charge carriers in the semicon- ductor by introducing acceptor states in the gate oxide. This overcomes the limitations of nanoscale doping and maintains the characteristics of impurity-free semiconduc- tor channels. Here, we demonstrate modulation doping via Al-induced acceptor states in a SiO₂ gate-dielectric of a SiGe-based Schottky barrier field-effect transistor. Compared to an undoped reference sample, pulsed and temperature-dependent electrical measurements revealed a 4170-times higher conductivity of the ungated SiGe chan- nel and a 3-fold increase in the p-type on-state current when the device is operated as a transistor. Importantly, the application of modulation doping to Ge-rich SBFETs may contribute to nanoscale devices with lower supply voltages and faster switching speeds.
