Properties of quantum emitters in different hBN sample types particularly suited for nanophotonic integration

Abstract

Single photon emitters in two-dimensional hexagonal boron nitride (hBN) are promising solid-state quantum emitters for photonic applications and quantum networks. Despite their favorable properties, much is still unknown about their characteristics and their atomic origin. We focus on two different kinds of hBN samples that particularly lend themselves for integration with nanophotonic devices, a layer-engineered sample from hBN grown by chemical vapor deposition and multilayer nanoflakes produced by liquid phase exfoliation. We investigate their inherent defects and fit computationally simulated optical properties of likely carbon-related defects to their measured emission profiles. Thereby we compare and elucidate the properties in different sample types particularly suited for photonic quantum networks and narrow down the origin of emitters found in these samples. Our work is thus an important step towards harnessing the full potential of single photon emitters in hBN.