<div class="csl-bib-body">
<div class="csl-entry">Zahedmanesh, H., Delie, G., Asif A. Shah, Ceric, H., Shrivastava, M., Park, S., & Tokei, Z. (2025). Thermally-Induced Morphology Changes in Subtractive Ru Lines and Their Mitigation. In <i>2025 IEEE International Interconnect Technology Conference (IITC)</i>. 2025 IEEE International Interconnect Technology Conference (IITC), Busan, Korea (the Republic of). IEEE. https://doi.org/10.1109/IITC66087.2025.11075477</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/223585
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dc.description.abstract
Etched Ru lines with 10 nm nominal linewidth and open interline space were annealed at 325 °C, 420 °C and 650 °C for up to 5 hours to explore thermal stability of their grain structure and morphology. The etched Ru lines showed drastic cylinderization of grains in cross-sectional and planar TEMs, which increased with anneal temperature. Atomistic and physics-based simulations showed surface diffusion to control the dynamics. In extreme cases, the morphology changes resulted in shorts between lines and a significant number of line breaks. Geometrical parameters such as line and grain aspect ratios, surface, interface and grain boundary energies and crystal orientation were found to be implicated. It is shown that suppressing surface diffusion of Ru will mitigate the instabilities.
en
dc.language.iso
en
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dc.subject
cylinderization
en
dc.subject
grain-boundary grooving
en
dc.subject
morphology change
en
dc.subject
Subtractive Ru nano-interconnects
en
dc.title
Thermally-Induced Morphology Changes in Subtractive Ru Lines and Their Mitigation
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
KU Leuven, Belgium
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dc.contributor.affiliation
physics and astronomy - KU Leuven (Leuven, BE)
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dc.contributor.affiliation
Indian Institute of Science Bangalore, India
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dc.contributor.affiliation
Hanyang University, Korea (the Republic of)
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dc.contributor.affiliation
Imec (Leuven, BE)
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dc.relation.isbn
979-8-3315-3782-1
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dc.relation.doi
10.1109/IITC66087.2025
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dc.relation.issn
2380-632X
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dc.type.category
Full-Paper Contribution
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dc.relation.eissn
2380-6338
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tuw.booktitle
2025 IEEE International Interconnect Technology Conference (IITC)
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tuw.peerreviewed
true
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tuw.relation.publisher
IEEE
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tuw.researchTopic.id
C6
-
tuw.researchTopic.id
C1
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.name
Computational Materials Science
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tuw.researchTopic.value
30
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tuw.researchTopic.value
70
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publisher.doi
10.1109/IITC66087.2025.11075477
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dc.description.numberOfPages
3
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tuw.author.orcid
0000-0002-0290-691X
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tuw.author.orcid
0000-0002-5646-3261
-
tuw.author.orcid
0009-0005-4372-5428
-
tuw.author.orcid
0009-0006-2440-6525
-
tuw.author.orcid
0000-0003-3545-3424
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tuw.event.name
2025 IEEE International Interconnect Technology Conference (IITC)
