<div class="csl-bib-body">
<div class="csl-entry">Gull, J., Filipovic, L., & Kosina, H. (2025). Accurate Carrier Dynamics for a Kane Dispersion Relation. In <i>2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i>. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Grenoble, France. https://doi.org/10.1109/SISPAD66650.2025.11185959</div>
</div>
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/223594
-
dc.description.abstract
Simulation of the energy distribution function (EDF) within microelectronic devices reveals potential weak points and, therefore, can be used to improve device reliability. Accurate Monte Carlo transport models for the evaluation of the EDF should incorporate a non-parabolic dispersion relation and account for electron-electron scattering. In this work, we present an accurate method for evaluating the exit time within a cell, which is necessary to enable sampling on cell edges.
en
dc.description.sponsorship
FWF - Österr. Wissenschaftsfonds
-
dc.language.iso
en
-
dc.subject
Electron-electron Scattering
en
dc.subject
Energy Distribution
en
dc.subject
Kane Dispersion
en
dc.subject
Monte Carlo Transport
en
dc.title
Accurate Carrier Dynamics for a Kane Dispersion Relation
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.relation.isbn
979-8-3315-4883-4
-
dc.relation.doi
10.1109/SISPAD66650.2025
-
dc.relation.grantno
P 35318-N
-
dc.type.category
Full-Paper Contribution
-
tuw.booktitle
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
-
tuw.peerreviewed
true
-
tuw.project.title
Adsorbatabhängige elektrische Leitfähigkeit von MoS2-FETs
-
tuw.researchTopic.id
Q4
-
tuw.researchTopic.id
C6
-
tuw.researchTopic.name
Nanoelectronics
-
tuw.researchTopic.name
Modeling and Simulation
-
tuw.researchTopic.value
30
-
tuw.researchTopic.value
70
-
tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
-
tuw.publication.orgunit
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials
-
tuw.publisher.doi
10.1109/SISPAD66650.2025.11185959
-
dc.description.numberOfPages
4
-
tuw.author.orcid
0000-0003-1687-5058
-
tuw.event.name
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
