<div class="csl-bib-body">
<div class="csl-entry">Fuchsberger, A., Knaller, N., Nazzari, D., Marböck, J., Prado Navarrete, E., Brehm, M., Pacheco-Sanchez, A., Vogl, L., Schweizer, P., Weber, W. M., & Sistani, M. (2026). A Cryogenic Ultra-Thin Body SiGeSn Transistor. <i>IEEE Journal of the Electron Devices Society</i>, <i>14</i>, 24–29. https://doi.org/10.1109/JEDS.2025.3647706</div>
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dc.identifier.issn
2168-6734
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/224648
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dc.description.abstract
Transistors capable of operating at cryogenic temperatures are key components for the fast and energy-efficient control and readout of qubits. However, the ultra-low power requirements and performance metrics are not met by conventional complementary metal oxide semiconductor technology, which has been optimized for room-temperature operation. Here, we propose to enhance Si-based Schottky junction field-effect transistors with ultra-thin layers of SiGeSn to address these issues. By combining single-elementary Al contacts to avoid dopant freeze-out and utilizing a multi-gate transistor architecture, which suppresses reverse junction leakage, a fivefold increase in on-current and a threefold increase in peak transconductance were achieved compared to a Si reference device. Measurements down to 5 K revealed a drain current modulation over nine orders of magnitude with improved inverse subthreshold slopes of 20 mV/dec below 50 K and 50% reduced threshold voltages, while the on-currents remain mostly temperature-independent, making the system interesting for cryogenic computing.