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<div class="csl-entry">Onder, S., Gaggl, P., Burin, J., Gsponer, A., Knopf, M., Waid, S., Moffat, N., Pellegrini, G., & Bergauer, T. (2025). Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation. <i>NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT</i>, <i>1080</i>, Article 170740. https://doi.org/10.1016/j.nima.2025.170740</div>
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dc.identifier.issn
0168-9002
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/225041
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dc.description.abstract
We present the design and simulation of a 30µm thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4µm thick epitaxially grown gain layer enables controlled internal amplification up to 1kV reverse bias, while maintaining full depletion below 500V. Electrical characteristics, including I-V, C-V, and gain behavior, were simulated in Synopsys Sentaurus Technology Computer-Aided Design (TCAD) using a quasi-1D geometry and verified across process-related variations in gain layer parameters. To ensure high-voltage stability and proper edge termination, a guard structure combining deep etched trenches and deep p⁺ junction termination extension (JTE) implants was designed. TCAD simulations varying the guard structure dimensions yielded an optimized design with a breakdown voltage above 2.4kV. A corresponding wafer run is currently processed at IMB-CNM, Barcelona.
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dc.language.iso
en
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dc.publisher
ELSEVIER
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dc.relation.ispartof
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
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dc.subject
High-energy physics
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dc.subject
LGAD
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dc.subject
Low gain avalanche diode
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dc.subject
Particle detector
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dc.subject
Silicon carbide
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dc.subject
TCAD
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dc.title
Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
