<div class="csl-bib-body">
<div class="csl-entry">Kostal, R., Reiter, T., & Filipovic, L. (2025). A New Module for Automated Optimization of Process TCAD Model Parameters. In <i>2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i> (pp. 1–4). IEEE. https://doi.org/10.1109/SISPAD66650.2025.11186325</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/225990
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dc.description.abstract
A new module for automated optimization of process TCAD model parameters is presented along with example use cases. Features include: novel ways of measuring profile discrepancy, seamless comparison of simulated 3D structures with 2D micrographs of experimental structures, and integration of state-of-the-art open source optimizers and tools for sensitivity analysis. Demonstrated through practical examples, the module enables excellent matching of simulated profiles to experimental micrographs for process calibration and provides valuable insights into parameter sensitivities using global sensitivity analysis, thereby addressing key challenges in TCAD model development.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.description.sponsorship
Infineon Technologies Austria AG
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dc.language.iso
en
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dc.subject
Deposition
en
dc.subject
Emulation
en
dc.subject
Etching
en
dc.subject
Optimization
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dc.subject
Process Simulation
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dc.subject
Sensitivity Analysis
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dc.title
A New Module for Automated Optimization of Process TCAD Model Parameters
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.relation.isbn
979-8-3315-4884-1
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dc.relation.doi
10.1109/SISPAD66650.2025
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dc.description.startpage
1
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dc.description.endpage
4
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dc.relation.grantno
00000
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dc.relation.grantno
6000013979
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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tuw.peerreviewed
true
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tuw.relation.publisher
IEEE
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tuw.project.title
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren
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tuw.project.title
Virtuelle Technologieentwicklung - Important Project of Common European Interest Microelectronics/Communication Technologies
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tuw.researchTopic.id
I6
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
C6
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tuw.researchTopic.name
Digital Transformation in Manufacturing
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
20
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tuw.researchTopic.value
10
-
tuw.researchTopic.value
70
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tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publication.orgunit
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials
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tuw.publisher.doi
10.1109/SISPAD66650.2025.11186325
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dc.description.numberOfPages
4
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tuw.author.orcid
0000-0002-5638-9129
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tuw.author.orcid
0000-0003-1687-5058
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tuw.event.name
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)