Evaluation of Insulator Candidates for Nanoelectronics Based on 2D Materials

Abstract

Despite considerable advancements in electronic devices based on 2D materials, their performance suffers from the lack of suitable gate insulators. Here, we focus on two promising insulators: Strontium titanate (SrTiO<inf>3</inf>), a high-κ perovskite used with MoS<inf>2</inf> to create high-performance n-type field-effect transistors (FETs) and bismuth oxyselenide (Bi<inf>2</inf>O<inf>2</inf>Se), whose native oxide (Bi<inf>2</inf>SeO<inf>5</inf>) serves as a gate dielectric. We evaluate the main performance criteria and suitability of these insulators as gate dielectrics based on multi-scale simulations (DFT and TCAD).