<div class="csl-bib-body">
<div class="csl-entry">Fleckl, G., Pfusterschmied, G., & Schmid, U. (2020, December 17). <i>Fast Low Temperature Oxidation of 4H-SiC</i> [Poster Presentation]. 51st IEEE Semiconductor Interface Specialists Conference, Wien, Austria. http://hdl.handle.net/20.500.12708/227075</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/227075
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dc.description.abstract
This work demonstrates a new approach for fabrication of high-quality oxide layers on 4H-SiC with application for gate-dielectrics for power electronic MOSFETs as well as for surface passivation in general. The exposure of 1016 cm-3 nitrogen-doped 4H-SiC substrates to a biased, pure oxygen plasma causes the formation of a 5 nm SiO2 layer on the substrate surface in very short times starting at 10 min at temperatures as low as 20°C. Continued by a 60 min thermal annealing step in low-pressure O2 atmosphere at 900°C, TEM investigations revealed the formation of a SiO2 layer of a total thickness of 14 nm. In comparison to the SiO2 growth rates of dry thermal oxidation of 4H-SiC the reported oxide layer thickness takes 60 min process time at 1150°C in a O2 atmosphere at atmospheric pressure.
en
dc.language.iso
en
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dc.subject
Oxidation
en
dc.subject
Fast Low
en
dc.subject
4H-SiC
en
dc.title
Fast Low Temperature Oxidation of 4H-SiC
en
dc.type
Presentation
en
dc.type
Vortrag
de
dc.type.category
Poster Presentation
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tuw.researchinfrastructure
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