<div class="csl-bib-body">
<div class="csl-entry">Scales, Z. (2026). <i>Characterization of electrically active dislocations in GaN by means of analytical TEM</i> [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2026.119184</div>
</div>
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dc.identifier.uri
https://doi.org/10.34726/hss.2026.119184
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/227977
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dc.description
Arbeit an der Bibliothek noch nicht eingelangt - Daten nicht geprueft - gesperrte Arbeit (bis 2028-04-13+02:00)
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dc.language
English
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dc.language.iso
en
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dc.rights.uri
http://rightsstatements.org/vocab/InC/1.0/
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dc.subject
GaN
de
dc.subject
Elektronenmikroskopie
de
dc.subject
GaN
en
dc.subject
electron microscopy
en
dc.title
Characterization of electrically active dislocations in GaN by means of analytical TEM