<div class="csl-bib-body">
<div class="csl-entry">Roy Chaudhuri, R., Rockermeier, H., Simko, C. A. R., Stabentheiner, M., Waltl, M., Ostermeier, C., & Pogany, D. (2026). Random telegraph noise related to extended defects in p-GaN/n-AlGaN diodes on GaN-on-Si substrate. In <i>WOCSDICE EXMATEC 2026 : Gdansk : Poland</i> (pp. 165–166).</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/229753
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dc.language.iso
en
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dc.subject
GaN-on-Si substrate
en
dc.subject
p-GaN/n-AIGaN diodes
en
dc.subject
HEMTs
en
dc.title
Random telegraph noise related to extended defects in p-GaN/n-AlGaN diodes on GaN-on-Si substrate
49th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) and the 20th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC)
