<div class="csl-bib-body">
<div class="csl-entry">Hiller, D., Nagarajan, S., Ratschinski, I., Shah, S., Shams, S., Fuchsberger, A., Sistani, M., Schmult, S., Wirth, S., Prado-Navarrete, E., Aberl, J., Brehm, M., Weber, W. M., Mikolajick, T., Trommer, J., & König, D. (2026, May 21). <i>Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon</i> [Poster Presentation]. 12th joint EUROSOI Workshop and international conference on ultimate integration on silicon (EUROSOI-ULIS 2026), Granada, Spain.</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/231018
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dc.language.iso
en
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dc.subject
Nanoelectronics
en
dc.subject
Modulation Acceptor Doping
en
dc.subject
cryo-electronics
en
dc.title
Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon