<div class="csl-bib-body">
<div class="csl-entry">Kainz, M. A., Deutsch, C., Krall, M., Brandstetter, M., Bachmann, D., Schönhuber, S., Detz, H., MacFarland, D. C., Andrews, A. M., Strasser, G., & Unterrainer, K. (2017). Low Effective Electron Mass InGaAs/InAlAs for High Power Terahertz Quantum Cascade Lasers. In <i>2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) (25-29 June 2017)</i>. Munich. https://doi.org/10.1109/CLEOE-EQEC.2017.8086429</div>
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The final publication is available via <a href="https://doi.org/10.1109/CLEOE-EQEC.2017.8086429" target="_blank">https://doi.org/10.1109/CLEOE-EQEC.2017.8086429</a>.
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dc.description.abstract
Summary form only given. Quantum cascade lasers (QCLs) are powerful sources of coherent radiation covering the frequency range from mid-infrared to terahertz. In the terahertz frequency range the active region is normally realized using a GaAs/Al x Ga 1-x As semiconductor heterostructure. This material system enables a variable conduction band offset by changing the Al-content in the barrier layers without introducing a significant lattice mismatch between the barrier and well material. In comparison to the standard GaAs-based material system, active regions based on material systems with a lower effective electron mass are highly beneficial for the design of terahertz QCLs as the optical gain increases for a lower effective electron mass [1]. Promising material systems are based on InGaAs or InAs with an effective electron mass of 0.043 and 0.023, respectively, compared to that of GaAs (0.067) [2, 3].In this work we present a systematic study of growth related asymmetries for terahertz QCLs based on the InGaAs/InAlAs material system lattice matched on InP. A nominally symmetric active region enables the comparison of the positive and negative bias direction of the very same device [4]. With such bias dependent performance measurements asymmetries like dopant migration and interface roughness, which play a crucial role in this material system, are studied and result in a preferred electron flow in growth direction. A structure based on a three well optical phonon depletion scheme is optimized for this bias direction. Depending on the doping concentration the performance of the QCLs shows a trade-off between maximum operating temperatures and high output powers. While a peak output power of 151 mW is achieved for a sheet doping density of 7.3 x 1010 cm-2, the highest operation temperature of 155 K is found for 2 x 1010 cm-2. By further attaching a hyperhemispherical GaAs lens to a laser facet, the peak output power could be improved and reaches a record output power ...
en
dc.language
English
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dc.language.iso
en
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dc.publisher
Munich
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dc.relation.ispartofseries
Conference on Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC) and European Quantum Electronics Conference
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dc.rights.uri
http://rightsstatements.org/vocab/InC/1.0/
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dc.subject
Quantum cascade lasers
en
dc.subject
Power generation
en
dc.subject
Gallium arsenide
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dc.subject
Doping
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dc.subject
Lattices
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dc.subject
Electron optics
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dc.subject
Lenses
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dc.title
Low Effective Electron Mass InGaAs/InAlAs for High Power Terahertz Quantum Cascade Lasers
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dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.rights.license
Urheberrechtsschutz
de
dc.rights.license
In Copyright
en
dc.relation.publication
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) (25-29 June 2017)
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dc.contributor.affiliation
Austrian Academy of Sciences, Austria
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dc.relation.isbn
9781509067367
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dc.rights.holder
2017 IEEE
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dc.type.category
Full-Paper Contribution
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tuw.version
am
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tuw.publication.orgunit
E387 - Institut für Photonik
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tuw.publisher.doi
10.1109/CLEOE-EQEC.2017.8086429
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dc.identifier.libraryid
AC15427380
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dc.identifier.urn
urn:nbn:at:at-ubtuw:3-5806
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tuw.author.orcid
0000-0002-6504-5862
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tuw.author.orcid
0000-0003-4230-7716
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tuw.author.orcid
0000-0002-4167-3653
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tuw.author.orcid
0000-0002-5790-2588
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tuw.author.orcid
0000-0003-0147-0883
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tuw.author.orcid
0000-0003-1970-9071
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dc.rights.identifier
Urheberrechtsschutz
de
dc.rights.identifier
In Copyright
en
item.grantfulltext
open
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item.languageiso639-1
en
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item.openaccessfulltext
Open Access
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item.openairetype
conference paper
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item.fulltext
with Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_5794
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crisitem.author.dept
E387-01 - Forschungsbereich Photonik
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crisitem.author.dept
E387 - Institut für Photonik
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crisitem.author.dept
E387 - Institut für Photonik
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crisitem.author.dept
E387 - Institut für Photonik
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crisitem.author.dept
E387 - Institut für Photonik
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crisitem.author.dept
E387-01 - Forschungsbereich Photonik
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crisitem.author.dept
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen