DC Field
Value
Language
dc.contributor.author
Ender, Johannes
-
dc.contributor.author
Mohamedou, Mohamed
-
dc.contributor.author
Fiorentini, Simone
-
dc.contributor.author
Orio, Roberto
-
dc.contributor.author
Selberherr, Siegfried
-
dc.contributor.author
Goes, Wolfgang
-
dc.contributor.author
Sverdlov, Viktor
-
dc.date.accessioned
2022-08-10T13:18:02Z
-
dc.date.available
2022-08-10T13:18:02Z
-
dc.date.issued
2020
-
dc.identifier.citation
<div class="csl-bib-body"> <div class="csl-entry">Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., &#38; Sverdlov, V. (2020). Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells. In <i>2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</i>. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. IEEE. https://doi.org/10.23919/sispad49475.2020.9241662</div> </div>
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/77159
-
dc.language.iso
en
-
dc.relation.ispartofseries
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
-
dc.title
Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells
en
dc.type
Konferenzbeitrag
de
dc.type
Inproceedings
en
dc.relation.publication
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
-
dc.relation.isbn
978-4-86348-763-5
-
dc.relation.doi
10.23919/SISPAD49475.2020.9241672
-
dc.relation.issn
1946-1569
-
dc.type.category
Full-Paper Contribution
-
dc.relation.eissn
1946-1577
-
tuw.booktitle
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
-
tuw.relation.publisher
IEEE
-
tuw.publication.orgunit
E360 - Institut für Mikroelektronik
-
tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
-
tuw.publisher.doi
10.23919/sispad49475.2020.9241662
-
dc.description.numberOfPages
4
-
tuw.event.name
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
-
tuw.event.startdate
23-09-2020
-
tuw.event.enddate
06-10-2020
-
tuw.event.online
On Site
-
tuw.event.type
Event for scientific audience
-
tuw.event.place
Tokyo
-
tuw.event.country
JP
-
tuw.event.presenter
Ender, Johannes
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
-
wb.sciencebranch.oefos
2020
-
wb.facultyfocus
Mikro- und Nanoelektronik
de
wb.facultyfocus
Micro- and Nanoelectronics
en
wb.facultyfocus.faculty
E350
-
wb.presentation.type
science to science/art to art
-
item.openairecristype
http://purl.org/coar/resource_type/c_5794
-
item.grantfulltext
restricted
-
item.languageiso639-1
en
-
item.cerifentitytype
Publications
-
item.fulltext
no Fulltext
-
item.openairetype
conference paper
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.orcid
0000-0002-5583-6177
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
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