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<div class="csl-entry">Isceri, S., Giparakis, M., Beiser, M., Detz, H., Schrenk, W., Bühler-Paschen, S., Strasser, G., & Andrews, A. M. (2021, October). <i>Epitaxy of YbRh2Si2 on Ge(001)</i> [Poster Presentation]. German MBE Workshop 2021, Göttingen, Germany. http://hdl.handle.net/20.500.12708/78084</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/78084
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dc.description.abstract
YbRh2Si2 is a heavy fermion metal [1, 2], it has a well-defined quantum critical point [2, 3], and shows superconductivity below 10 mK [4]. Literature reports the synthesis of bulk YbRh2Si2 by various techniques. This work investigates the growth of YbRh2Si2 thin films by molecular beam epitaxy (MBE) with the goal of single crystal thin films.
