Final Report of the IEEE International Integrated Reliability Workshop (IIRW)

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Final Report of the IEEE International Integrated Reliability Workshop (IIRW)
 

Publications Publikationen

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PreviewAuthors / EditorsTitleTypeIssue Date
1Grasser, Tibor ; Wagner, Paul-Jürgen ; Hehenberger, Philipp Paul ; Gös, Wolfgang ; Kaczer, Ben A Rigorous Study of Measurement Techniques for Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2007
2Reisinger, H. ; Grasser, Tibor ; Schlünder, C. A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETSKonferenzbeitrag Inproceedings2009
3Bindu, B. ; Gös, Wolfgang ; Kaczer, Ben ; Grasser, Tibor Analytical Solution of the Switching Trap Model for Negative Bias Temperature StressKonferenzbeitrag Inproceedings2009
4Gös, Wolfgang ; Grasser, Tibor Charging and Discharging of Oxide Defects in Reliability IssuesKonferenzbeitrag Inproceedings2007
5Coppeta, Raffaele Alberto ; Ceric, Hajdin ; Holec, David ; Grasser, Tibor Critical thickness for GaN thin film on AlN substrateKonferenzbeitrag Inproceedings2013
6Southwick III, R. G. ; Purnell, Shem T. ; Rapp, Blake A. ; Thompson, Ryan J. ; Pugmire, Shane K ; Kaczer, Ben ; Grasser, Tibor ; Knowlton, B. Cryogenic to Room Temperature Effects of NBTI in High-k PMOS DevicesKonferenzbeitrag Inproceedings2011
7Grasser, Tibor ; Kaczer, Ben ; Aichinger, T. ; Gös, Wolfgang ; Nelhiebel, M. Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate StacksKonferenzbeitrag Inproceedings2008
8Rott, Gunnar Andreas ; Nielen, H. ; Reisinger, H. ; Gustin, W. ; Tyaginov, S. E. ; Grasser, Tibor Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel TransistorsKonferenzbeitrag Inproceedings2013
9Tyaginov, S. E. ; Bina, Markus ; Franco, J. ; Osintsev, Dimitry ; Wimmer, Yannick ; Kaczer, Ben ; Grasser, Tibor Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETsKonferenzbeitrag Inproceedings2013
10Wittmann, Robert ; Puchner, H ; Hinh, L ; Ceric, Hajdin ; Gehring, Andreas ; Selberherr, Siegfried Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFETKonferenzbeitrag Inproceedings2005
11Bina, Markus ; Aichinger, T. ; Pobegen, G. ; Gös, Wolfgang ; Grasser, Tibor Modeling of DCIV Recombination Currents Using A Multistate Multiphonon ModelKonferenzbeitrag Inproceedings2011
12Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben Modeling of Dispersive Transport in the Context of Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2006
13Schanovsky, Franz ; Grasser, Tibor On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2011
14Southwick III, R. G. ; Knowlton, B. ; Kaczer, Ben ; Grasser, Tibor On the Thermal Activation of Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2009
15Kaczer, Ben ; Toledano-Luque, M. ; Franco, J. ; Grasser, Tibor ; Roussel, Ph. J. ; Camargo, V. V. A. ; Mahato, S. ; Simoen, E. ; Catthoor, F. ; Wirth, G.I. ; Groeseneken, G. Recent Trends in CMOS Reliability: From Individual Traps to Circuit SimulationsKonferenzbeitrag Inproceedings2011
16Franco, J. ; Kaczer, Ben ; Roussel, Philippe J. ; Toledano-Luque, M. ; Weckx, P. ; Grasser, Tibor Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI VariabilityKonferenzbeitrag Inproceedings2013
17Kaczer, Ben ; Chen, C. S. ; Watt, J. T. ; Chanda, K. ; Weckx, P. ; Toledano-Luque, M. ; Groeseneken, G. ; Grasser, Tibor Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA ApplicationsKonferenzbeitrag Inproceedings2013
18Reisinger, H. ; Vollertsen, R. P. ; Wagner, Paul-Jürgen ; Huttner, T. ; Martin, A. ; Aresu, S. ; Gustin, W. ; Grasser, Tibor ; Schlünder, C. The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided OxidesKonferenzbeitrag Inproceedings2008
19Ryan, J. T. ; Lenahan, P. M. ; Grasser, Tibor ; Enichlmair, H. What Triggers NBTI? An "On The Fly" Electron Spin Resonance ApproachKonferenzbeitrag Inproceedings2009