Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis
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Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis
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| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Tyaginov, S. E. ; Starkov, Ivan ; Enichlmair, H. ; Jungemann, C. ; Park, Jong Mun ; Seebacher, E. ; Orio, Roberto ; Ceric, Hajdin ; Grasser, Tibor | An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation | Konferenzbeitrag Inproceedings | 2011 | |
| 2 | Pobegen, G. ; Aichinger, T. ; Grasser, Tibor ; Nelhiebel, M. | Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs | Konferenzbeitrag Inproceedings | 2011 |