Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
 

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Results 1-9 of 9 (Search time: 0.003 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Sverdlov, Viktor ; Selberherr, Siegfried Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel JunctionsKonferenzbeitrag Inproceedings 2018
2Simonka, Vito ; Nawratil, Georg ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate ModelingKonferenzbeitrag Inproceedings 2016
3Manstetten, Paul ; Filipovic, Lado ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity ApproachKonferenzbeitrag Inproceedings 2016
4Ghosh, Joydeep ; Osintsev, Dimitry ; Sverdlov, Viktor ; Ganguly, S. Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance AnalysisKonferenzbeitrag Inproceedings 2018
5Wang, L. ; Sadi, T. ; Brown, A.R. ; Nedjalkov, Mihail ; Alexander, Craig ; Cheng, B. ; Millar, C. ; Asenov, A Simulation Analysis of the Electro-Thermal Performance of SOI FinFETsKonferenzbeitrag Inproceedings 2016
6Sverdlov, Viktor ; Selberherr, Siegfried Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon StructuresKonferenzbeitrag Inproceedings 2016
7Medina-Bailón, C. ; Sadi, T. ; Nedjalkov, Mihail ; Lee, J. ; Berrada, S. ; Carillo-Nunez, H. ; Georgiev, V. ; Selberherr, Siegfried ; Asenov, A Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire TransistorsKonferenzbeitrag Inproceedings 2018
8Sverdlov, Viktor ; Makarov, Alexander ; Selberherr, Siegfried Switching Current Reduction in Advanced Spin-Orbit Torque MRAMKonferenzbeitrag Inproceedings 2018
9Klemenschits, Xaver ; Selberherr, Siegfried ; Filipovic, Lado Unified Feature Scale Model for Etching in SF6 and Cl Plasma ChemistriesKonferenzbeitrag Inproceedings 2018