2020 IEEE International Reliability Physics Symposium (IRPS)

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2020 IEEE International Reliability Physics Symposium (IRPS)
 

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PreviewAuthors / EditorsTitleTypeIssue Date
1Tyaginov, Stanislav ; Grill, Alexander ; Vandemaele, Michiel ; Grasser, Tibor ; Hellings, Geert ; Makarov, Alexander ; Jech, Markus ; Linten, Dimitri ; Kaczer, Ben A Compact Physics Analytical Model for Hot-Carrier DegradationKonferenzbeitrag Inproceedings 2020
2Waltl, Michael Defect Spectroscopy in SiC DevicesKonferenzbeitrag Inproceedings2020
3Ruch, Bernhard ; Pobegen, Gregor ; Schleich, Christian ; Grasser, Tibor Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge PumpingKonferenzbeitrag Inproceedings 2020
4Kruv, A. ; Kaczer, B. ; Grill, A ; Gonzalez, M. ; Franco, J. ; Linten, D. ; Goes, W. ; Grasser, T. ; De Wolf, I. On the impact of mechanical stress on gate oxide trappingKonferenzbeitrag Inproceedings 2020
5Michl, J. ; Grill, A. ; Claes, D. ; Rzepa, G. ; Kaczer, B. ; Linten, D. ; Radu, I. ; Grasser, T. ; Waltl, M. Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic TemperaturesKonferenzbeitrag Inproceedings 2020
6Grill, A. ; Bury, E. ; Michl, J. ; Tyaginov, S. ; Linten, D. ; Grasser, T. ; Parvais, B. ; Kaczer, B. ; Waltl, M. ; Radu, I. Reliability and Variability of Advanced CMOS Devices at Cryogenic TemperaturesKonferenzbeitrag Inproceedings2020
7Berens, J. ; Weger, M. ; Pobegen, G. ; Aichinger, T. ; Rescher, G. ; Schleich, C. ; Grasser, T. Similarities and Differences of BTI in SiC and Si Power MOSFETsKonferenzbeitrag Inproceedings 2020
8Grasser, T. ; Kaczer, B. ; O'Sullivan, B. ; Rzepa, G. ; Stampfer, B. ; Waltl, M. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen ReleaseKonferenzbeitrag Inproceedings 2020