IEEE International Reliability Workshop (IIRW)

Event name
IEEE International Reliability Workshop (IIRW)
 
Event type
Event for scientific audience
 
Start date
17-10-2005
End date
20-10-2005
 
Location
S. Lake Tahoe
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-20 of 23 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Grasser, Tibor ; Wagner, Paul-Jürgen ; Hehenberger, Philipp Paul ; Gös, Wolfgang ; Kaczer, Ben A Rigorous Study of Measurement Techniques for Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2007
2Reisinger, H. ; Grasser, Tibor ; Schlünder, C. A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETSKonferenzbeitrag Inproceedings2009
3Bindu, B. ; Gös, Wolfgang ; Kaczer, Ben ; Grasser, Tibor Analytical Solution of the Switching Trap Model for Negative Bias Temperature StressKonferenzbeitrag Inproceedings2009
4Grill, A. ; Rzepa, G. ; Lagger, P. ; Ostermaier, C. ; Ceric, Hajdin ; Grasser, T. Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTsKonferenzbeitrag Inproceedings 2015
5Gös, Wolfgang ; Grasser, Tibor Charging and Discharging of Oxide Defects in Reliability IssuesKonferenzbeitrag Inproceedings2007
6Coppeta, Raffaele Alberto ; Ceric, Hajdin ; Holec, David ; Grasser, Tibor Critical thickness for GaN thin film on AlN substrateKonferenzbeitrag Inproceedings2013
7Grasser, Tibor ; Kaczer, Ben ; Aichinger, T. ; Gös, Wolfgang ; Nelhiebel, M. Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate StacksKonferenzbeitrag Inproceedings2008
8Tyaginov, S. ; Bina, M. ; Franco, J. ; Wimmer, Y. ; Rudolf, F. ; Enichlmair, H. ; Park, J.M. ; Kaczer, B. ; Ceric, H. ; Grasser, T. Dominant mechanisms of hot-carrier degradation in short- and long-channel transistorsKonferenzbeitrag Inproceedings2014
9Rott, Gunnar Andreas ; Nielen, H. ; Reisinger, H. ; Gustin, W. ; Tyaginov, S. E. ; Grasser, Tibor Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel TransistorsKonferenzbeitrag Inproceedings2013
10Ceric, H. ; Singulani, A. Pires ; de Orio, R. L. ; Selberherr, S. Electromigration enhanced growth of intermetallic compound in solder bumpsKonferenzbeitrag Inproceedings2013
11Zisser, W. H. ; Ceric, H. ; de Orio, R. L. ; Selberherr, S. Electromigration induced stress in open TSVsKonferenzbeitrag Inproceedings2013
12Tyaginov, S. E. ; Bina, Markus ; Franco, J. ; Osintsev, Dimitry ; Wimmer, Yannick ; Kaczer, Ben ; Grasser, Tibor Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETsKonferenzbeitrag Inproceedings2013
13Wittmann, Robert ; Puchner, H ; Hinh, L ; Ceric, Hajdin ; Gehring, Andreas ; Selberherr, Siegfried Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFETKonferenzbeitrag Inproceedings2005
14Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben Modeling of Dispersive Transport in the Context of Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2006
15Giering, Kay-Uwe ; Sohrmann, Christoph ; Rzepa, Gerhard ; Heis, Leonhard ; Grasser, Tibor ; Jancke, Roland NBTI modeling in analog circuits and its application to long-term aging simulationsKonferenzbeitrag Inproceedings2014
16de Orio, R. L. ; Gousseau, S. ; Moreau, S. ; Cerice, H. ; Selberherr, S. ; Farcy, A. ; Bay, F. ; Inal, K. ; Montmitonnet, P. On the material depletion rate due to electromigration in a copper TSV structureKonferenzbeitrag Inproceedings2014
17Southwick III, R. G. ; Knowlton, B. ; Kaczer, Ben ; Grasser, Tibor On the Thermal Activation of Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2009
18Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T. Physical modeling of hot-carrier degradation in nLDMOS transistorsKonferenzbeitrag Inproceedings2014
19Franco, J. ; Kaczer, Ben ; Roussel, Philippe J. ; Toledano-Luque, M. ; Weckx, P. ; Grasser, Tibor Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI VariabilityKonferenzbeitrag Inproceedings2013
20Kaczer, Ben ; Chen, C. S. ; Watt, J. T. ; Chanda, K. ; Weckx, P. ; Toledano-Luque, M. ; Groeseneken, G. ; Grasser, Tibor Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA ApplicationsKonferenzbeitrag Inproceedings2013