IEEE International Reliability Workshop (IIRW)

Event name
IEEE International Reliability Workshop (IIRW)
Event type
Event for scientific audience
Start date
End date
S. Lake Tahoe
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-20 of 23 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Grasser, Tibor ; Wagner, Paul-Jürgen ; Hehenberger, Philipp Paul ; Gös, Wolfgang ; Kaczer, Ben A Rigorous Study of Measurement Techniques for Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2007
2Reisinger, H. ; Grasser, Tibor ; Schlünder, C. A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETSKonferenzbeitrag Inproceedings2009
3Bindu, B. ; Gös, Wolfgang ; Kaczer, Ben ; Grasser, Tibor Analytical Solution of the Switching Trap Model for Negative Bias Temperature StressKonferenzbeitrag Inproceedings2009
4Grill, A. ; Rzepa, G. ; Lagger, P. ; Ostermaier, C. ; Ceric, Hajdin ; Grasser, T. Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTsKonferenzbeitrag Inproceedings 2015
5Gös, Wolfgang ; Grasser, Tibor Charging and Discharging of Oxide Defects in Reliability IssuesKonferenzbeitrag Inproceedings2007
6Coppeta, Raffaele Alberto ; Ceric, Hajdin ; Holec, David ; Grasser, Tibor Critical thickness for GaN thin film on AlN substrateKonferenzbeitrag Inproceedings2013
7Grasser, Tibor ; Kaczer, Ben ; Aichinger, T. ; Gös, Wolfgang ; Nelhiebel, M. Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate StacksKonferenzbeitrag Inproceedings2008
8Tyaginov, S. ; Bina, M. ; Franco, J. ; Wimmer, Y. ; Rudolf, F. ; Enichlmair, H. ; Park, J.M. ; Kaczer, B. ; Ceric, H. ; Grasser, T. Dominant mechanisms of hot-carrier degradation in short- and long-channel transistorsKonferenzbeitrag Inproceedings2014
9Rott, Gunnar Andreas ; Nielen, H. ; Reisinger, H. ; Gustin, W. ; Tyaginov, S. E. ; Grasser, Tibor Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel TransistorsKonferenzbeitrag Inproceedings2013
10Ceric, H. ; Singulani, A. Pires ; de Orio, R. L. ; Selberherr, S. Electromigration enhanced growth of intermetallic compound in solder bumpsKonferenzbeitrag Inproceedings2013
11Zisser, W. H. ; Ceric, H. ; de Orio, R. L. ; Selberherr, S. Electromigration induced stress in open TSVsKonferenzbeitrag Inproceedings2013
12Tyaginov, S. E. ; Bina, Markus ; Franco, J. ; Osintsev, Dimitry ; Wimmer, Yannick ; Kaczer, Ben ; Grasser, Tibor Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETsKonferenzbeitrag Inproceedings2013
13Wittmann, Robert ; Puchner, H ; Hinh, L ; Ceric, Hajdin ; Gehring, Andreas ; Selberherr, Siegfried Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFETKonferenzbeitrag Inproceedings2005
14Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben Modeling of Dispersive Transport in the Context of Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2006
15Giering, Kay-Uwe ; Sohrmann, Christoph ; Rzepa, Gerhard ; Heis, Leonhard ; Grasser, Tibor ; Jancke, Roland NBTI modeling in analog circuits and its application to long-term aging simulationsKonferenzbeitrag Inproceedings2014
16de Orio, R. L. ; Gousseau, S. ; Moreau, S. ; Cerice, H. ; Selberherr, S. ; Farcy, A. ; Bay, F. ; Inal, K. ; Montmitonnet, P. On the material depletion rate due to electromigration in a copper TSV structureKonferenzbeitrag Inproceedings2014
17Southwick III, R. G. ; Knowlton, B. ; Kaczer, Ben ; Grasser, Tibor On the Thermal Activation of Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2009
18Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T. Physical modeling of hot-carrier degradation in nLDMOS transistorsKonferenzbeitrag Inproceedings2014
19Franco, J. ; Kaczer, Ben ; Roussel, Philippe J. ; Toledano-Luque, M. ; Weckx, P. ; Grasser, Tibor Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI VariabilityKonferenzbeitrag Inproceedings2013
20Kaczer, Ben ; Chen, C. S. ; Watt, J. T. ; Chanda, K. ; Weckx, P. ; Toledano-Luque, M. ; Groeseneken, G. ; Grasser, Tibor Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA ApplicationsKonferenzbeitrag Inproceedings2013