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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Kaczer, Ben ; Mahato, S. ; Valduga de Almeida Camargo, V. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Grasser, Tibor ; Catthoor, F. ; Dobrovolny, P. ; Zuber, P. ; Wirth, G.I. ; Groeseneken, G. | Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations | Konferenzbeitrag Inproceedings | 2011 |
| 2 | | Toledano-Luque, M. ; Kaczer, Ben ; Simoen, E. ; Degraeve, R. ; Franco, J. ; Roussel, Ph. J. ; Grasser, Tibor ; Groeseneken, G. | Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs | Konferenzbeitrag Inproceedings | 2012 |
| 3 | | Weckx, P. ; Kaczer, Ben ; Toledano-Luque, M. ; Grasser, Tibor ; Roussel, Ph. J. ; Kukner, H. ; Raghavan, P. ; Catthoor, F. ; Groeseneken, G. | Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM | Konferenzbeitrag Inproceedings | 2013 |
| 4 | | Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Mitard, J. ; Ragnarsson, L. A. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Horiguchi, N. ; Groeseneken, G. ; Bukhori, Muhammad Faiz ; Grasser, Tibor ; Asenov, A | Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs | Konferenzbeitrag Inproceedings | 2012 |
| 5 | | Franco, J. ; Kaczer, Ben ; Cho, M. ; Eneman, G. ; Groeseneken, G. ; Grasser, Tibor | Improvements of NBTI Reliability in SiGe p-FETs | Konferenzbeitrag Inproceedings | 2010 |
| 6 | | Kaczer, Ben ; Chen, C. ; Weckx, P. ; Roussel, Ph. J. ; Toledano-Luque, M. ; Cho, M. ; Watt, J. T. ; Chanda, K. ; Groeseneken, G. ; Grasser, Tibor | Maximizing reliable performance of advanced CMOS circuits-A case study | Konferenzbeitrag Inproceedings | 2014 |
| 7 | | Kaczer, Ben ; Grasser, Tibor ; Martin-Martinez, J. ; Simoen, E. ; Aoulaiche, M. ; Roussel, Ph. J. ; Groeseneken, G. | NBTI from the Perspective of Defect States with Widely Distributed Time Scales | Konferenzbeitrag Inproceedings | 2009 |
| 8 | | Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph. J. ; Cho, M. ; Mitard, J. ; Witters, L. ; Hoffmann, T. Y. ; Groeseneken, G. ; Crupi, F. ; Grasser, T. | On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFETs | Konferenzbeitrag Inproceedings | 2011 |
| 9 | | Kaczer, Ben ; Grasser, Tibor ; Roussel, Ph. J. ; Franco, J. ; Degraeve, R. ; Ragnarsson, L. A. ; Simoen, E. ; Groeseneken, G. ; Reisinger, H. | Origin of NBTI Variability in Deeply Scaled pFETs | Konferenzbeitrag Inproceedings | 2010 |
| 10 | | Kaczer, B. ; Franco, J. ; Cho, M. ; Grasser, T. ; Roussel, Ph. J. ; Tyaginov, S. ; Bina, M. ; Wimmer, Y. ; Procel, L. M. ; Trojman, L. ; Crupi, F. ; Pitner, G. ; Putcha, V. ; Weckx, P. ; Bury, E. ; Ji, Z. ; De Keersgieter, A. ; Chiarella, T. ; Horiguchi, N. ; Groeseneken, G. ; Thean, A. | Origins and implications of increased channel hot carrier variability in nFinFETs | Konferenzbeitrag Inproceedings | 2015 |
| 11 | | Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Groeseneken, G. ; Schwarz, Benedikt ; Bina, Markus ; Waltl, Michael ; Wagner, Paul-Jürgen ; Grasser, Tibor | Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias | Konferenzbeitrag Inproceedings | 2013 |
| 12 | | Toledano-Luque, M. ; Kaczer, Ben ; Roussel, Ph. J. ; Grasser, Tibor ; Wirth, G.I. ; Franco, J. ; Vrancken, C. ; Horiguchi, N. ; Groeseneken, G. | Response of a Single Trap to AC Negative Bias Temperature Stress | Konferenzbeitrag Inproceedings | 2011 |
| 13 | | Kaczer, Ben ; Franco, J. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Bukhori, Muhammad Faiz ; Asenov, A ; Schwarz, Benedikt ; Bina, Markus ; Grasser, Tibor ; Groeseneken, G. | The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes | Konferenzbeitrag Inproceedings | 2012 |
| 14 | | Kaczer, Ben ; Grasser, Tibor ; Roussel, Ph. J. ; Martin-Martinez, J. ; O´Connor, R. ; O´Sullivan, B. J. ; Groeseneken, G. | Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights | Konferenzbeitrag Inproceedings | 2008 |
