International Semiconductor Device Research Symposium (ISDRS)

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Description

Event name
International Semiconductor Device Research Symposium (ISDRS)
 
Event type
Event for scientific audience
 
Start date
12-12-2007
End date
14-12-2007
 
Location
College Park, MD, USA
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-16 of 16 (Search time: 0.003 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Vasicek, Martin ; Cervenka, Johann ; Wagner, Martin ; Karner, Markus ; Grasser, Tibor A 2D-Non-Parabolic Six Moments ModelKonferenzbeitrag Inproceedings2007
2Starkov, Ivan ; Starkov, A. S. ; Tyaginov, S. E. ; Enichlmair, H. ; Ceric, Hajdin ; Grasser, Tibor An Analytical Model for MOSFET Local Oxide CapacitanceKonferenzbeitrag Inproceedings2011
3Karamitaheri, Hossein ; Pourfath, Mahdi ; Faez, R. ; Kosina, Hans An Investigation of ZGNR-Based TransistorsKonferenzbeitrag Inproceedings2011
4Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried Domain-Wall Spintronic Memristor for Capacitance and Inductance SensingKonferenzbeitrag Inproceedings2011
5Nemecek, Alexander ; Zimmermann, Horst Gate-Controlled Photodetector in PIN Technology for Distance MeasurementsKonferenzbeitrag Inproceedings2007
6Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, Stephan ; Quay, Rudiger High-temperature modeling of AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2009
7Ghosh, Joydeep ; Sverdlov, Viktor ; Selberherr, Siegfried Influence of a Space Charge Region on Spin Transport in SemiconductorKonferenzbeitrag Inproceedings2013
8Karner, Markus ; Baumgartner, Oskar ; Pourfath, Mahdi ; Vasicek, Martin ; Kosina, Hans Investigation of a MOSCAP Using NEGFKonferenzbeitrag Inproceedings2007
9Vitanov, S. ; Palankovski, V. Normally-off AlGaN/GaN HEMTs with InGaN cap layer: A theoretical studyKonferenzbeitrag Inproceedings2007
10Vitanov, Stanislav ; Kuzmik, Jan ; Palankovski, Vassil Normally-off InAlN/GaN HEMTs with n<sup>++</sup> GaN cap layer: A simulation studyKonferenzbeitrag Inproceedings2011
11Osintsev, Dimitry ; Sverdlov, Viktor ; Makarov, Alexander ; Selberherr, Siegfried Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated TemperatureKonferenzbeitrag Inproceedings2011
12Orio, Roberto ; Ceric, Hajdin ; Selberherr, Siegfried Strain-Induced Anisotropy of Electromigration in Copper InterconnectKonferenzbeitrag Inproceedings2007
13Sverdlov, Viktor ; Baumgartner, Oskar ; Selberherr, Siegfried Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction BandKonferenzbeitrag Inproceedings2009
14Makarov, Alexander ; Sverdlov, Viktor ; Osintsev, Dimitry ; Selberherr, Siegfried Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel JunctionsKonferenzbeitrag Inproceedings2011
15Sverdlov, Viktor ; Karlowatz, Gerhard ; Dhar, Siddhartha ; Kosina, Hans ; Selberherr, Siegfried Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and MobilityKonferenzbeitrag Inproceedings2007
16Strasser, Gottfried ; Hoffmann, Leonard ; Hurni, C ; Mujagic, Elvis ; Nobile, Michele ; Andrews, Aaron Maxwell ; Klang, Pavel ; Schrenk, Werner Y-coupled GaAs Quantum Cascade LasersPräsentation Presentation2007