2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
08-09-2011
End date
10-09-2011
 
Location
Osaka
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-14 of 14 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Rupp, Karl ; Grasser, Tibor ; Jüngel, Ansgar Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport EquationKonferenzbeitrag Inproceedings2011
2Starkov, Ivan ; Ceric, Hajdin ; Tyaginov, Stanislav ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETsKonferenzbeitrag Inproceedings2011
3de Orio, R. L. ; Ceric, H. ; Selberherr, S. A compact model for early electromigration lifetime estimationKonferenzbeitrag Inproceedings2011
4Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans Efficient simulation of quantum cascade lasers using the Pauli master equationKonferenzbeitrag Inproceedings2011
5Weinbub, Josef ; Cervenka, Johann ; Rupp, Karl ; Selberherr, Siegfried High-quality mesh generation based on orthogonal software modulesKonferenzbeitrag Inproceedings2011
6Filipovic, L. ; Selberherr, S. A Level Set simulator for nanooxidation using non-contact atomic force microscopyKonferenzbeitrag Inproceedings2011
7Schanovsky, F. ; Baumgartner, O. ; Grasser, T. Multi scale modeling of multi phonon hole capture in the context of NBTIKonferenzbeitrag Inproceedings2011
8Ceric, H. ; de Orio, R. L. ; Schanovsky, F. ; Zisser, W. H. ; Selberherr, S. Multilevel simulation for the investigation of fast diffusivity pathsKonferenzbeitrag Inproceedings2011
9Rupp, Karl ; Grasser, Tibor ; Jüngel, Ansgar Parallel preconditioning for spherical harmonics expansions of the Boltzmann transport equationKonferenzbeitrag Inproceedings2011
10Osintsev, Dmitri ; Sverdlov, Viktor ; Makarov, Alexander ; Selberherr, Siegfried Properties of InAs- and silicon-based ballistic spin field-effect transistorsKonferenzbeitrag Inproceedings2011
11Hehenberger, Ph. ; Goes, W. ; Baumgartner, O. ; Franco, J. ; Kaczer, B. ; Grasser, T. Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETsKonferenzbeitrag Inproceedings2011
12Tyaginov, Stanislav ; Starkov, Ivan ; Triebl, Oliver ; Ceric, Hajdin ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFETKonferenzbeitrag Inproceedings2011
13Neophytou, Neophytos ; Kosina, Hans Strong anisotropy and diameter effects on the low-field mobility of silicon nanowiresKonferenzbeitrag Inproceedings2011
14Stanojevic, Z. ; Karner, M. ; Schnass, K. ; Kernstock, C. ; Baumgartner, O. ; Kosina, H. A versatile finite volume simulator for the analysis of electronic properties of nanostructuresKonferenzbeitrag Inproceedings2011