IEEE Transactions on Device and Materials Reliability

View Statistics Email Alert RSS Feed

Journal description

Title Titel
IEEE Transactions on Device and Materials Reliability
 
e-ISSN
1558-2574
 
ISSN
1530-4388
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Subject:  Electronic, Optical and Magnetic Materials
Date Issued:  [2000 TO 2009]

Results 1-6 of 6 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ceric, H. ; de Orio, R.L. ; Cervenka, J. ; Selberherr, S. A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern InterconnectsArtikel Article2009
2Grasser, Tibor ; Wagner, Paul-JÜrgen ; Hehenberger, Philipp ; Goes, Wolfgang ; Kaczer, Ben A Rigorous Study of Measurement Techniques for Negative Bias Temperature InstabilityArtikel Article2008
3Goes, W. ; Karner, M. ; Sverdlov, V. ; Grasser, T. Charging and Discharging of Oxide Defects in Reliability IssuesArtikel Article2008
4Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport ModelsArtikel Article Mar-2008
5Ceric, Hajdin ; Selberherr, Siegfried Editorial Preface to the Special Section on Electromigration Published in March 2009Artikel Article2009
6Reisinger, H. ; Vollertsen, R. P. ; Wagner, Paul-Jürgen ; Huttner, T. ; Martin, A. ; Aresu, S. ; Gustin, W. ; Grasser, Tibor ; Schlünder, C. A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided OxidesArtikel Article 2009