IEEE Transactions on Electron Devices

View Statistics Email Alert RSS Feed

Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Date Issued:  [2000 TO 2009]

Results 1-15 of 15 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTIArtikel Article2009
2Palestri, P ; Barin, N ; Brunel, D ; Busseret, C ; Campera, A ; Childs, P ; Driussi, F ; Fiegna, C. ; Fiori, G ; Gusmeroli, R ; Iannaccone, G ; Karner, Markus ; Kosina, Hans ; Lacaita, Andrea Leonardo ; Langer, Erasmus ; Majkusiak, Bogdan ; Monzio Compagnoni, C ; Poncet, A ; Sangiorgi, E. ; Selmi, L ; Spinelli, A ; Walczak, J Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate StacksArtikel Article Jan-2007
3Moens, Peter ; Bychikhin, Sergey ; Reynders, K ; Pogany, Dionyz ; Gornik, Erich ; Tack, M Dynamics of integrated vertical DMOS transistors under 100ns TLP stressArtikel Article2005
4Dhar, Siddhartha ; Kosina, Hans ; Palankovski, Vassil ; Ungersböck, Stephan Enzo ; Selberherr, Siegfried Electron Mobility Model for Strained-Si DevicesArtikel Article 2005
5Grasser, Tibor ; Kaczer, Ben Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETsArtikel Article2009
6Jungemann, C. ; Grasser, Tibor ; Neinhüs, Burkhard ; Meinerzhagen, Bernd Failure of Moments-Based Transport Models in Nanoscale Devices Near EquilibriumArtikel Article2005
7Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Jungemann, Christoph ; Nishi, Kenji ; Selberherr, Siegfried ; Takagi, Shinichi Foreword Special Issue on Simulation and Modeling of Nanoelectronics DevicesArtikel Article2007
8Schmid, U. ; Sheppard, S.T. ; Wondrak, W. High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6HSiCArtikel Article2000
9Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried High-Field Electron Mobility Model for Strained-Silicon DevicesArtikel Article2006
10Kuzmik, Jan ; Kostopoulos, T ; Konstantinidis, G. ; Carlin, J.-F ; Georgakilas, A ; Pogany, Dionyz InAlN/GaN HEMTs: A first insight into technological optimizationArtikel Article2006
11Raleva, K. ; Vasileska, Dragica ; Goodnick, S.M. ; Nedjalkov, Mihail Modeling Thermal Effects in NanodevicesArtikel Article2008
12Denison, Marie ; Blaho, M. ; Rodin, Pavel ; Dubec, Victor ; Pogany, Dionyz ; Silber, D ; Gornik, Erich ; Stecher, Matthias Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current StressArtikel Article2004
13Kuzmik, Jan ; Pozzovivo, Gianmauro ; Abermann, Stephan ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Bertagnolli, Emmerich ; Strasser, Gottfried ; Pogany, Dionyz Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO₂ or HfO₂Artikel Article2008
14Ungersboeck, E. ; Dhar, S. ; Karlowatz, G. ; Sverdlov, V. ; Kosina, H. ; Selberherr, S. The Effect of General Strain on the Band Structure and Electron Mobility of SiliconArtikel Article2007
15Kuzmik, Jan ; Bychikhin, Sergey ; neuburger, Martin ; Dadgar, A ; Krost, A ; Kohn, Erhard ; Pogany, Dionyz Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on SiliconArtikel Article2005