IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [1900 TO 1999]
Date Issued:  [1980 TO 1989]

Results 1-8 of 8 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Machek, J. ; Selberherr, S. A Novel Finite-Element Approach to Device ModelingArtikel Article1983
2Markowich, P.A. ; Ringhofer, C.A. ; Selberherr, S. ; Lentini, M. A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor EquationsArtikel Article1983
3Franz, A.F. ; Franz, G.A. ; Selberherr, S. ; Ringhofer, C. ; Markowich, P. Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device SimulationArtikel Article 1983
4Selberherr, Siegfried ; Schütz, A. ; Pötzl, Hans MINIMOS - A Two-Dimensional MOS Transistor AnalyzerArtikel Article 1980
5Hänsch, W. ; Selberherr, Siegfried MINIMOS 3: A MOSFET Simulator that Includes Energy BalanceArtikel Article 1987
6Selberherr, S. MOS Device Modeling at 77KArtikel Article1989
7Jüngling, Werner ; Pichler, P. ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical MethodsArtikel Article 1985
8Pichler, P. ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC-Fabrication StepsArtikel Article 1985