IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Selberherr, S.

Results 1-20 of 25 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Abramo, A. ; Baudry, L. ; Brunetti, R. ; Castagne, R. ; Charef, M. ; Dessene, F. ; Dollfus, P. ; Dutton, R. ; Engl, W.L. ; Fauquembergue, R. ; Fiegna, C. ; Fischetti, M.V. ; Galdin, S. ; Goldsman, N. ; Hackel, Michael ; Hamaguchi, C. ; Hess, K. ; Hennacy, K. ; Hesto, P. ; Higman, J.M. ; Iizuka, T. ; Jungemann, C. ; Kamakura, Y. ; Kosina, Hans ; Kunikiyo, T. ; Laux, S.E. ; Lin, H. ; Maziar, C. ; Mizuno, H. ; Peifer, H.J. ; Ramaswamy, S. ; Sano, N. ; Scrobohaci, P.G. ; Selberherr, Siegfried ; Takenaka, M. ; Tang, T.-W. ; Taniguchi, K. ; Thobel, J.L. ; Thoma, R. ; Tomizawa, K. ; Tomizawa, M. ; Vogelsang, T. ; Wang, S.-L. ; Wang, X ; Yao, C.-S. ; Yoder, P.D. ; Yoshii, A. A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport SiliconArtikel Article 1994
2Machek, J. ; Selberherr, S. A Novel Finite-Element Approach to Device ModelingArtikel Article1983
3Yazdanpanah, Arash ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried A Numerical Study of Line-Edge Roughness Scattering in Graphene NanoribbonsArtikel Article2012
4Markowich, P.A. ; Ringhofer, C.A. ; Selberherr, S. ; Lentini, M. A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor EquationsArtikel Article1983
5Puchner, H. ; Selberherr, S. An Advanced Model for Dopant Diffusion in PolysiliconArtikel Article1995
6Goharrizi, Arash Yazdanpanah ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene NanoribbonsArtikel Article2011
7Sverdlov, Viktor ; El-Sayed, Al-Moatasem Bellah ; Kosina, Hans ; Selberherr, Siegfried Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T' PhaseArtikel Article 2020
8Dhar, Siddhartha ; Kosina, Hans ; Palankovski, Vassil ; Ungersböck, Stephan Enzo ; Selberherr, Siegfried Electron Mobility Model for Strained-Si DevicesArtikel Article 2005
9Simonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon CarbideArtikel Article 4-Jan-2018
10Franz, A.F. ; Franz, G.A. ; Selberherr, S. ; Ringhofer, C. ; Markowich, P. Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device SimulationArtikel Article 1983
11Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Nishi, Kenji ; Ranaweera, Jeewika ; Selberherr, Siegfried Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and MeasurementsArtikel Article2011
12Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Jungemann, Christoph ; Nishi, Kenji ; Selberherr, Siegfried ; Takagi, Shinichi Foreword Special Issue on Simulation and Modeling of Nanoelectronics DevicesArtikel Article2007
13Lorenz, J. ; Bär, E. ; Clees, T. ; Jancke, Roland ; Salzig, C. ; Selberherr, Siegfried Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: MethodologyArtikel Article 16-Jun-2011
14Lorenz, J. ; Bär, E. ; Clees, T. ; Evanschitzky, P. ; Jancke, Roland ; Kampen, C. ; Paschen, U. ; Salzig, C. ; Selberherr, Siegfried Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: ResultsArtikel Article 16-Jun-2011
15Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried High-Field Electron Mobility Model for Strained-Silicon DevicesArtikel Article2006
16Selberherr, Siegfried ; Schütz, A. ; Pötzl, Hans MINIMOS - A Two-Dimensional MOS Transistor AnalyzerArtikel Article 1980
17Hänsch, W. ; Selberherr, Siegfried MINIMOS 3: A MOSFET Simulator that Includes Energy BalanceArtikel Article 1987
18Selberherr, S. MOS Device Modeling at 77KArtikel Article1989
19Manavizadeh, Negin ; Raissi, Farshid ; Soleimani, Ebrahim Asl ; Pourfath, Mahdi ; Selberherr, Siegfried Performance Assessment of Nanoscale Field Effect DiodesArtikel Article2011
20Vitanov, Stanislav ; Palankovski, Vassil ; Maroldt, S. ; Quay, Rüdiger ; Murad, S. ; Rödle, T. ; Selberherr, Siegfried Physics-Based Modeling of GaN HEMTsArtikel Article Mar-2012