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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Karaca, Hasan ; Holland, Steffen ; Ritter, Hans-Martin ; Kumar, Vasantha ; Notermans, Guido ; Pogany, Dionyz | 3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary IV Behavior and Holding Current in ESD Protection SCRs | Artikel Article  | 2021 |
| 2 | | Ghobadi, Nayereh ; Pourfath, Mahdi | A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures | Artikel Article | 2014 |
| 3 | | Abramo, A. ; Baudry, L. ; Brunetti, R. ; Castagne, R. ; Charef, M. ; Dessene, F. ; Dollfus, P. ; Dutton, R. ; Engl, W.L. ; Fauquembergue, R. ; Fiegna, C. ; Fischetti, M.V. ; Galdin, S. ; Goldsman, N. ; Hackel, Michael ; Hamaguchi, C. ; Hess, K. ; Hennacy, K. ; Hesto, P. ; Higman, J.M. ; Iizuka, T. ; Jungemann, C. ; Kamakura, Y. ; Kosina, Hans ; Kunikiyo, T. ; Laux, S.E. ; Lin, H. ; Maziar, C. ; Mizuno, H. ; Peifer, H.J. ; Ramaswamy, S. ; Sano, N. ; Scrobohaci, P.G. ; Selberherr, Siegfried ; Takenaka, M. ; Tang, T.-W. ; Taniguchi, K. ; Thobel, J.L. ; Thoma, R. ; Tomizawa, K. ; Tomizawa, M. ; Vogelsang, T. ; Wang, S.-L. ; Wang, X ; Yao, C.-S. ; Yoder, P.D. ; Yoshii, A. | A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon | Artikel Article | 1994 |
| 4 | | Azar, Nima Sefidmooye ; Pourfath, Mahdi | A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites | Artikel Article | 2015 |
| 5 | | Djavid, Nima ; Khaliji, Kaveh ; Tabatabaei, Seyed Mohammad ; Pourfath, Mahdi | A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons | Artikel Article | 2014 |
| 6 | | Machek, J. ; Selberherr, S. | A Novel Finite-Element Approach to Device Modeling | Artikel Article | 1983 |
| 7 | | Yazdanpanah, Arash ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried | A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons | Artikel Article | 2012 |
| 8 | | Markowich, P.A. ; Ringhofer, C.A. ; Selberherr, S. ; Lentini, M. | A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations | Artikel Article | 1983 |
| 9 | | Ahsan, Sheikh Aamir ; Singh, Shivendra Kumar ; Mir, Mehak Ashraf ; Perucchini, Marta ; Polyushkin, Dmitry K. ; Mueller, Thomas ; Fiori, Gianluca ; Marin, Enrique G. | A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design | Artikel Article | 2021 |
| 10 | | Puchner, H. ; Selberherr, S. | An Advanced Model for Dopant Diffusion in Polysilicon | Artikel Article | 1995 |
| 11 | | Goharrizi, Arash Yazdanpanah ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried | An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons | Artikel Article | 2011 |
| 12 | | Rigato, Matteo ; Fleury, Clement ; Schwarz, Benedikt ; Mergens, Markus ; Bychikhin, Sergey ; Simburger, Werner ; Pogany, Dionyz | Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology | Artikel Article | 2018 |
| 13 | | Vasicek, Martin ; Cervenka, Johann ; Esseni, David ; Palestri, Pierpaolo ; Grasser, Tibor | Applicability of Macroscopic Transport Models to Decananometer MOSFETs | Artikel Article | 2012 |
| 14 | | Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor | Applicability of Shockley-Read-Hall Theory for Interface States | Artikel Article | 2021 |
| 15 | | Gholipour, M. ; Masoumi, N. ; Chen, Y. C. ; Chen, D. ; Pourfath, Mahdi | Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design | Artikel Article | 2014 |
| 16 | | Karamitaheri, Hossein ; Pourfath, Mahdi ; Faez, Rahim ; Kosina, Hans | Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons | Artikel Article | 2013 |
| 17 | | Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor | Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs | Artikel Article | 2017 |
| 18 | | Palestri, P ; Barin, N ; Brunel, D ; Busseret, C ; Campera, A ; Childs, P ; Driussi, F ; Fiegna, C. ; Fiori, G ; Gusmeroli, R ; Iannaccone, G ; Karner, Markus ; Kosina, Hans ; Lacaita, Andrea Leonardo ; Langer, Erasmus ; Majkusiak, Bogdan ; Monzio Compagnoni, C ; Poncet, A ; Sangiorgi, E. ; Selmi, L ; Spinelli, A ; Walczak, J | Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks | Artikel Article | Jan-2007 |
| 19 | | Lagger, Peter ; Reiner, Maria ; Pogany, Dionyz ; Ostermaier, Clemens | Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments | Artikel Article | 2014 |
| 20 | | Sverdlov, Viktor ; El-Sayed, Al-Moatasem Bellah ; Kosina, Hans ; Selberherr, Siegfried | Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T' Phase | Artikel Article | 2020 |
