Microelectronics Reliability

Title Titel
Microelectronics Reliability
 
e-ISSN
1872-941X
 
ISSN
0026-2714
 
Publisher Herausgeber
PERGAMON-ELSEVIER SCIENCE LTD
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 
 

Publications Publikationen

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Author:  Grasser, T.
Author:  Waltl, Michael

Results 1-6 of 6 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kaczer, B. ; Franco, J. ; Weckx, P. ; Roussel, Ph.J. ; Putcha, V. ; Bury, E. ; Simicic, M. ; Chasin, A. ; Linten, D. ; Parvais, B. ; Catthoor, F. ; Rzepa, G. ; Waltl, M. ; Grasser, T. A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent VariabilityArtikel Article 2018
2Wilhelmer, Christoph ; Waldhoer, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole captureArtikel Article 2022
3Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. Comphy -- A Compact-Physics Framework for Unified Modeling of BTIArtikel Article 2018
4Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of Single-Defects on the Variability of CMOS Inverter CircuitsArtikel Article 2021
5Waltl-2021-Microelectronics Reliability-vor.pdf.jpgWaltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of single-defects on the variability of CMOS inverter circuitsArticle Artikel Nov-2021
6Waltl, Michael ; Stampfer, Bernhard ; Rzepa, Gerhard ; Kaczer, Ben ; Grasser, Tibor Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS TransistorsArtikel Article 2020