Optical Engineering

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Journal description

Title Titel
Optical Engineering
 
e-ISSN
1560-2303
 
ISSN
0091-3286
 
Publisher Herausgeber
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
 
Publisher's Address Herausgeber Adresse
1000 20TH ST, PO BOX 10, BELLINGHAM, USA, WA, 98225
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Steindl, Bernhard

Results 1-8 of 8 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Gaberl, Wolfgang ; Schneider-Hornstein, Kerstin ; Enne, Reinhard ; Steindl, Bernhard ; Zimmermann, Horst Avalanche photodiode with high responsivity in 0.35 μm CMOSArtikel Article 2014
2Poushi, Seyed Saman Kohneh ; Mahmoudi, Hiwa ; Hofbauer, Michael ; Steindl, Bernhard ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst Experimental and simulation study of fill-factor enhancement using a virtual guard ring in n⁺∕p-well CMOS single-photon avalanche diodesArtikel Article 2021
3Hofbauer, Michael ; Steindl, Bernhard ; Zimmermann, Horst Fully integrated optical receiver using single-photonavalanche diodes in high-voltage CMOSArtikel Article 2020
4Dervic, Alija ; Steindl, Bernhard ; Hofbauer, Michael ; Zimmermann, Horst High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probabilityArtikel Article Apr-2019
5Jukic, Tomislav ; Steindl, Bernhard ; Enne, Reinhard ; Zimmermann, Horst Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductorArtikel Article2015
6Hofbauer, Michael ; Steindl, Bernhard ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst Performance of high-voltage CMOS single-photon avalanche diodes with and without well-modulation techniqueArtikel Article 2020
7Enne, Reinhard ; Steindl, Bernhard ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst pn photodiode in 0.35-μm high-voltage CMOS with 1.2-GHz bandwidthArtikel Article2014
8Steindl, Bernhard ; Enne, Reinhard ; Zimmermann, Horst Thick detection zone single-photon avalanche diode fabricated in 0.35μm complementary metal-oxide semiconductorsArtikel Article 2015