Performance of high-voltage CMOS single-photon avalanche diodes with and without well-modulation technique

Abstract

We investigate single-photon avalanche diodes with a thick absorption zone leadingto a high photon detection probability in the near-infrared spectrum, e.g., to 27.9% at 850 nm. Furthermore, modulation doping for tuning the breakdown voltage in single-photon avalanchediodes is used. Modulation doping allows for reduction of the effective doping in the structureduring the design phase without process modifications. We compare a modulation doped versionwith a single-photon avalanche diode not using this technique. We prove that both versions areoperational. The modulation doped version shows a reduced dark count rate and afterpulsingprobability at the cost of a reduced photon detection probability.