Record link: 
http://hdl.handle.net/20.500.12708/142752
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Title: 
High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability
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Citation: 
Dervic, A., Steindl, B., Hofbauer, M., & Zimmermann, H. (2019). High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability. Optical Engineering, 58(04), 1. https://doi.org/10.1117/1.oe.58.4.040501
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Publisher DOI: 
10.1117/1.oe.58.4.040501
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Dervic, Alija 
Steindl, Bernhard 
Hofbauer, Michael 
Zimmermann, Horst 
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Organisational Unit: 
E354-02 - Forschungsbereich Integrated Circuits 
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Journal: 
Optical Engineering 
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ISSN: 
0091-3286
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Date (published): 
Apr-2019
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Number of Pages: 
4
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Publisher: 
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
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Peer reviewed: 
Yes
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Keywords: 
General Engineering; Atomic and Molecular Physics, and Optics; single-photon avalanche diode; active quenching; high-voltage quenching; photon detection probability; optoelectonic inte-grated circuits; photodetectors.
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Abstract: 
A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-μm CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90 μm. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm.
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Research Areas: 
Sensor Systems: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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